Two-dimensional nano tungsten disulfide semiconductor film and preparation method thereof

Abstract

The invention discloses a preparation method of a two-dimensional nano tungsten disulfide semiconductor film, which comprises the following steps: putting tungsten trioxide into a ceramic boat, and putting the ceramic boat into a quartz tube chamber; placing the sapphire substrate dripped with the graphene quantum dots in a ceramic boat with the front face facing downwards; placing the ceramic boat at the central position of a high-temperature constant-temperature area in a tubular furnace; putting sulfur powder into a ceramic boat, and putting the ceramic boat in a low-temperature area in a tubular furnace; a vacuum pump is connected for vacuumizing so as to ensure that air in the quartz tube cavity is exhausted; and heating the tubular furnace to a first preset temperature within a first preset time, and carrying out a constant-temperature reaction for a second preset time to obtain the tungsten disulfide semiconductor film. The invention also discloses a two-dimensional nano tungsten disulfide semiconductor film. The graphene quantum dots with uniform size are prepared by using a citric acid pyrolysis method. The graphene quantum dots are used as an accelerant for tungsten disulfide growth, and the graphene quantum dots are introduced to the sapphire substrate, so that surface impurities are reduced, and tungsten disulfide deposition is promoted.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a two-dimensional nanometer tungsten disulfide semiconductor thin film and a preparation method thereof. Background technique [0002] Two-dimensional materials are an important part of the field of nanomaterials. Two-dimensional materials are a general term for a class of materials, referring to thin-film materials that are only one or a few atomic layers thick. It has always been believed that a thin film with a thickness as small as the atomic size is considered to be thermodynamically unstable, so it is impossible to exist. It was not until the preparation of single-layer graphene in 2004 that the existence of two-dimensional materials was proved. Since then Scientific research on two-dimensional materials has only gradually begun to attract widespread attention. [0003] At present, the methods for preparing two-dimensional materials mainly include chemical vapor dep...

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Problems solved by technology

However, the tungsten disulfide thin films prepared by these methods have obvious shortcomings such as yield and quality. At present, there is a lack of mature preparation techniques for preparing large-area, high-quality two-dimensional tungsten disulfide semiconductor thin films.

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