Preparation method of silicon carbide semiconductor device, silicon carbide semiconductor device and application of silicon carbide semiconductor device

Abstract

The invention discloses a silicon carbide semiconductor device preparation method, a silicon carbide semiconductor device and application thereof, a first mask layer is formed on one side of a silicon carbide substrate layer, first injection is performed to form a well region, the silicon carbide substrate layer is of a first conductive type, and the well region is of a second conductive type; the first conductive type is opposite to the second conductive type, and the thickness of the first mask layer is 0.1-10 [mu] m; the first conduction type material is injected into the well region for the second time, a first source region is formed, and the angle between the first source region and the normal is 10-70 degrees during injection. According to the preparation method of the silicon carbide semiconductor device, the short channel with the required width is formed by adjusting the thickness and the injection angle of the mask layer, and the thickness and the injection angle of the mask layer can be accurately controlled through process parameters of equipment, namely, the required channel length can be controlled by adjusting the process parameters; and the controllability and the stability of preparing the silicon carbide semiconductor device with the required channel can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for preparing a silicon carbide semiconductor device, a silicon carbide semiconductor device and applications thereof. Background technique [0002] Power integrated circuits refer to special integrated circuits that integrate power devices, low-voltage control circuits, signal processing and communication interface circuits into the same chip. The application of power integrated circuits not only reduces the size of the whole machine, reduces the connection, reduces the parasitic parameters, but also makes the cost lower, smaller and lighter, so it is widely used in communication and network, computer And consumer electronics, industrial and automotive electronics and many other fields. Power devices are developing rapidly, from low-power, low-frequency, semi-controlled to high-power, high-frequency, fully-controlled. Power devices of various structures a...

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Problems solved by technology

Therefore, the channel prepared by this method is affected by the shape of the well mask layer, the thickness of the channel mask layer, and dry etching. Any process drift will lead to differences in the length and shape of the final channel.

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