Heterojunction solar cell and manufacturing method thereof

Abstract

The invention provides a heterojunction solar cell and a manufacturing method thereof, and a plurality of amorphous layers are formed on the side surface of a monocrystalline silicon substrate of the heterojunction solar cell structure. Electric leakage caused by direct contact among the first transparent conductive film layer, the second transparent conductive film layer and the side surface of the monocrystalline silicon substrate can be avoided, and the risk that the edge of the monocrystalline silicon substrate is damaged is reduced; and the side surface of the monocrystalline silicon substrate is wrapped by the first intrinsic amorphous layer and the second intrinsic amorphous layer together, so that the overall passivation effect of the monocrystalline silicon substrate can be effectively improved, and the photoelectric conversion efficiency of the heterojunction battery piece is further improved.

Description

technical field [0001] The invention relates to the field of photovoltaic manufacturing, in particular to a heterojunction solar cell and a manufacturing method thereof. Background technique [0002] Heterojunction solar cells are currently a relatively efficient crystalline silicon solar cell, which combines the characteristics of crystalline silicon cells and silicon-based thin-film cells, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency and large power generation. figure 1 Shown is a schematic structural diagram of a heterojunction solar cell involved in the prior art, which includes a first collector electrode 51', a first transparent conductive film layer 41', a first doped amorphous layer 31', The first intrinsic amorphous layer 21', the single crystal silicon substrate 10', the second intrinsic amorphous layer 22', the second doped amorphous layer 32', the second transparent conductive film layer 42', the secon...

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Problems solved by technology

[0005] However, the heterojunction solar cells involved in the prior art have the following problems: the side of the single crystal silicon substrate 10' is not shielded by the amorphous silicon layer, and the first transparent conductive film layer 41' and the second transparent conductive film layer 42' are easily separated from the single crystal silicon substrate 10'. The direct contact between the crystalline silicon substrates 10' has the risk of electric leakage; the direct exposure of the edge of the single crystalline silicon substrate 10' will increase the risk of edge damage; the passivation of the edge area of ​​the single crystalline silicon substrate 10' is insufficient

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