Optical receiving device integrated with circuit and manufacturing method thereof
A light-receiving device and circuit technology, which is applied in the direction of electric solid-state devices, semiconductor devices, circuits, etc., can solve the problems that separated photodiodes cannot receive uniform incident light and crosstalk characteristics deteriorate
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example 1
[0092] Figure 1A A cross-sectional view of the circuit-integrated light receiving device 100 according to Example 1 of the present invention is shown. The emitter region 15 of the NPN transistor is formed using polysilicon 16 as a diffusion source and electrode. To isolate components on parts of an integrated circuit from each other, local oxidation (also known as LOCOS) is performed. Separate photodiodes are formed on the same silicon substrate on which the integrated circuits are formed. Split photodiodes have a diffused structure, which increases response speed and reduces RF noise. Specifically, the diffusion current component having a slow response is reduced, thereby increasing the response speed. The capacitance of the photodiode is also reduced (see Japanese Laid-Open Laid-Open No. 10-107243 Figure 12 ).
[0093] An antireflection film is formed on the surface of the above-described diffusion structure to reduce leakage current. To this end, a silicon thermal o...
example 2
[0107] Figure 4A A cross-sectional view of a circuit-integrated light receiving device 200 according to Example 2 of the present invention is shown. The method of manufacturing the circuit-integrated light receiving device 200 is characterized in that local oxidation (LOCOS) for isolation in the integrated circuit portion does not occur in the separated portion of the separated photodiode formed in Example 1. For the above reasons, the crosstalk characteristics are not substantially deteriorated. Figure 4B A flow chart of the manufacturing method of the circuit-integrated light receiving device 200 of Example 2 is shown. Refer below Figure 4B with Figures 5A to 5D The manufacturing method is introduced.
[0108] refer to Figure 5A , on the P-type semiconductor substrate 1, a P-type buried diffusion layer 2 is formed in a region to be an isolation region. N-type buried diffusion layer 3 is formed in the NPN transistor portion. Thereafter, an N-type epitaxial layer 4...
example 3
[0116] Figure 6A A cross-sectional view of a circuit-integrated light receiving device 300 according to Example 3 of the present invention is shown. In the device 300 of Example 3, similar to Example 2, the LOCOS process does not take place in the isolated portion of the photodiode. In addition, the P-type diffusion layer 10 required to improve the response of the photodiode is formed. In Example 2, the P-type diffusion layer 10 is absent. Figure 6B A flowchart of a method of manufacturing the light-receiving device 300 integrated with a circuit is shown. Refer below Figure 6B as well as Figures 7A to 7C Introduce its manufacturing method.
[0117] Similar to Example 1, on a P-type semiconductor substrate 1, a P-type buried diffusion layer 2 and an N-type buried diffusion layer 3 are formed. An N-type epitaxial layer 4 is grown on the resulting structure. Similar to Examples 1 and 2, P-type semiconductor substrate 1 has a resistivity of about 500 Ωcm.
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