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A high-precision photoresist composition and its direct writing system

A photoresist and composition technology, applied in the field of photoresist and femtosecond laser direct writing, can solve the problems of reducing direct writing accuracy, spherical aberration, affecting the quality of light spots, etc., to reduce internal stress and improve mechanical stability , Improving the effect of direct writing accuracy

Active Publication Date: 2022-05-06
ZHEJIANG LAB +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, Müller et al. reported that the mechanical properties of photoresist will seriously affect the structural stability of high-precision writing lines
On the other hand, when performing femtosecond laser direct writing, the laser needs to pass through the photoresist after being focused by the objective lens. If the refractive index of the objective lens and the photoresist do not match, it will cause significant phase difference or spherical aberration, which will affect the quality of the spot and reduce the directivity. write precision

Method used

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  • A high-precision photoresist composition and its direct writing system
  • A high-precision photoresist composition and its direct writing system
  • A high-precision photoresist composition and its direct writing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] (dicyclopentenyl methacrylate)

[0067] Preparation of photoresist: prepare a 20 mL clean brown sample bottle, wash and dry; weigh 6 g of dicyclopentenyl methacrylate, add it to the sample bottle, and weigh 4 g of o-phenylphenol polyoxyethylene ether Acrylate, stirred for 30 min, ultrasonicated for 60 min, and finally shaken for 2-3 h to obtain a well-mixed solution. Weigh 100 mg of 7-diethylamino-3-thienoylcoumarin, add it to the above mixed solution, stir for 30 min, sonicate for 60 min, and shake overnight to complete the dissolution. The refractive index was 1.52 using an Abbe refractometer.

[0068] Substrate cleaning: A 25 mm×25 mm silicon wafer was ultrasonically cleaned in acetone, ethanol, and isopropanol for 15 min, and after drying, it was cleaned with a plasma cleaner for 1 min to remove organic impurities on the surface, and a clean substrate was obtained. Silicon substrate.

[0069] as attached figure 1 As shown, the direct writing system used for t...

Embodiment 2

[0073] (dicyclopentenyl methacrylate)

[0074] Prepare a 20 mL clean brown sample bottle, wash and dry; weigh 8g of dicyclopentenyl methacrylate, add it to the sample bottle, and weigh 9,9-bis[4-(2-hydroxy-3-propene Acyloxypropoxy)phenyl]fluorene 2 g, stirred for 1~3 h, and a uniformly mixed solution can be obtained. Weigh 100 mg of 7-diethylamino-3-thienoylcoumarin, add it to the above mixed solution, stir for 30 min, sonicate for 60 min, and shake overnight to complete the dissolution. The refractive index was measured to be 1.52 using an Abbe refractometer.

[0075] Using the same method as in Example 1, a line writing experiment and a shrinkage rate test were performed.

[0076] After writing, the sample was soaked in propylene glycol methyl ether acetate and isopropanol for 15 minutes respectively, and finally rinsed with clean isopropanol and dried in the air.

Embodiment 3

[0077] Example 3 (ring containing methyl substitution)

[0078] (3,3,5-Trimethylcyclohexylmethacrylate)

[0079] Prepare a 20 mL clean brown sample bottle, wash and dry; weigh 3.5g of 3,3,5-trimethylcyclohexyl methacrylate, add it to the sample bottle, and weigh o-phenylphenol polyoxyethylene ether acrylate 6.5g, stirring for 1~3 h, you can get a well-mixed solution. Weigh 100 mg of 7-diethylamino-3-thienoylcoumarin, add it to the above mixed solution, stir for 30 min, sonicate for 60 min, and shake overnight to complete the dissolution. The refractive index was measured to be 1.52 using an Abbe refractometer.

[0080] Using the same method as in Example 1, a line writing experiment and a shrinkage rate test were performed.

[0081] After writing, the sample was soaked in propylene glycol methyl ether acetate and isopropanol for 15 minutes respectively, and finally rinsed with clean isopropanol and dried in the air.

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Abstract

The invention belongs to the technical field of photoresist and laser direct writing, and discloses a high-precision photoresist composition suitable for femtosecond laser direct writing. The photoresist composition is composed of a monomer and a photoinitiator. The technical feature is that the photoresist composition has two-color photosensitivity, can be polymerized by a femtosecond laser of a specific wavelength, and at the same time can be inhibited by another continuous laser beam, and the inhibiting beam reduces the direct writing of the femtosecond laser. Therefore, the precision of femtosecond laser direct writing is improved; further, the difference between the refractive index of the photoresist composition and the refractive index of the objective lens of the optical system is less than 0.01, which reduces the aberration or spherical aberration of the laser in the photoresist, Thus, the precision of femtosecond laser direct writing is further improved. The photoresist composition provided by the present invention not only has high direct writing precision, but also has lower direct writing threshold and volume shrinkage rate through the monomer of specific structure.

Description

technical field [0001] The invention belongs to the technical field of photoresist and femtosecond laser direct writing, and more specifically relates to a high-precision photoresist composition and a direct writing system thereof. Background technique [0002] Femtosecond laser direct writing technology is a maskless lithography technology that uses femtosecond laser to achieve direct writing. The femtosecond laser beam is scanned on the substrate with photoresist to directly generate graphic information without a mask. Improved processing efficiency. [0003] Femtosecond laser direct writing lateral resolution according to Rayleigh diffraction theory , where λ is the wavelength, n is the refractive index of the photoresist, and nsinθ is the numerical aperture of the objective lens. For example, the lateral resolution of an 800 nm femtosecond laser focused by an objective lens with a numerical aperture of 1.4 is about 340 nm. Researchers in this field adjust the direct ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/027G03F7/20
CPCG03F7/027G03F7/70383
Inventor 邱毅伟曹春关玲玲沈小明夏贤梦匡翠方刘旭
Owner ZHEJIANG LAB