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Method for realizing negative differential resistance at room temperature by using perovskite micro-crystal

A perovskite and microcrystalline technology, applied in the fields of optics, semiconductors, and nanomaterials, can solve the problems of resource consumption and strict implementation requirements, and achieve the effect of prolonging the service life, simple experimental equipment, and easy to realize.

Active Publication Date: 2022-03-18
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past, people have found NDR in molecular junctions, PN junctions, interlayer films, and perovskite film structures, graphene and other structures, but they often face problems such as harsh implementation requirements and high resource consumption. We use a single perovskite Crystal realizes negative differential resistance at room temperature, which can effectively solve such problems

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  • Method for realizing negative differential resistance at room temperature by using perovskite micro-crystal
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  • Method for realizing negative differential resistance at room temperature by using perovskite micro-crystal

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Embodiment Construction

[0014] The measurement structure, results and schematic diagram of the NDR effect are provided. For details, please refer to Figure 1~Figure 3 .

[0015] Attached below figure 1 , the specific embodiment of the present invention will be described in detail.

[0016] Example: first extrude a drop of EGaIn (3) from a needle tube (1) with good airtightness, contact with a flat gold-plated substrate, and control the separation of the piezoelectric device (7) to form a tapered needle tip, and then chemical vapor deposition (CVD) single-layer graphene (5) grown on copper foil is wet-transferred to a silicon substrate (6) with a size of 1.5cm*1.5cm, and perovskite microcrystals (10~50μm, Cube, 4), then fix the needle tip position, control the rise of the substrate through piezoelectric (7), make the perovskite microcrystals contact with EGaIn, and irradiate with 405nm purple light (2), and measure its NDR characteristics at room temperature.

[0017] figure 2 Forward and revers...

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Abstract

The invention relates to a method for realizing negative differential resistance (NDR) at room temperature by using perovskite microcrystals, which comprises the following steps of: forming a sandwich structure by using a gallium-indium alloy (EGaIn) needle tip, CH3NH3PbBr3 perovskite microcrystals and single-layer graphene on a silicon substrate; because a compensation electric field generated by separation and accumulation of ions at the electrode / perovskite interface shields an electric field applied externally and enhances recombination of photon-generated carriers, an I-V curve shows a negative differential resistance effect. The technology provides a new method and means for a novel integrated semiconductor device to stably and normally work at room temperature and high voltage in the future.

Description

technical field [0001] The invention belongs to a method for realizing negative differential resistance at room temperature by using perovskite microcrystals, and relates to many fields such as semiconductors, nanometer materials, and optics. Background technique [0002] With the rapid development of semiconductor technology, traditional silicon-based devices often face a series of problems such as strong electric field breakdown and heat dissipation when they are integrated in a small size. As a new type of semiconductor material, perovskite has great application potential in small-scale integration. Organic lead trihalide MAPbX in organic-inorganic perovskite hybrid materials 3 (MA=CH 3 NH 3 , X = I, Br or Cl) are widely used in lasers, light-emitting diodes, solar cells, sensors, devices such as photodetectors. Under the irradiation of a certain wavelength, the perovskite material can generate photogenerated carriers inside, which are collected by the electrodes at ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L47/00H10N80/00
CPCH10N80/01H10N80/00
Inventor 向东赵智宾倪立发李跃龙王文铎尹凯凯
Owner NANKAI UNIV