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Active RCD absorption circuit and control method

A technology of absorbing circuit and control method, which is applied in the direction of electrical components, output power conversion devices, etc., can solve the problem that the DS peak voltage of the push-pull full-bridge circuit cannot be effectively reduced, and achieve low loss, strong robustness, and small size Effect

Pending Publication Date: 2022-03-18
苏州博沃创新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The snubber circuit cannot effectively reduce the DS peak voltage of the MOS tube in the push-pull full bridge circuit, and cannot avoid the instability caused by the active clamp circuit

Method used

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  • Active RCD absorption circuit and control method
  • Active RCD absorption circuit and control method
  • Active RCD absorption circuit and control method

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Embodiment 1

[0033] Such as figure 1 As shown, an active RCD snubber circuit includes a MOS tube and a diode, the gate of the MOS tube is connected to the control terminal, and the drains of the MOS tube are respectively connected to one end of a plurality of resistors connected in parallel. The other end of the resistor is connected to the anode of the diode, the cathode of the diode is connected to the source of the MOS transistor, the drain of the MOS transistor and the control terminal are also connected to the first resistor, and the multiple resistors connected in parallel The other end is also connected to one end of multiple capacitors connected in parallel, the other end of the multiple capacitors connected in parallel is used as a first connection end, and the source of the MOS transistor is used as a second connection end.

[0034] In order to meet the needs of the circuit, the capacitor voltage can be appropriately increased to achieve controlled absorption of the DS peak.

[...

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PUM

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Abstract

The invention discloses an active RCD absorption circuit, which comprises an MOS tube and a diode, the grid electrode of the MOS tube is connected with a control end, the drain electrode of the MOS tube is respectively connected with one ends of a plurality of resistors which are connected in parallel, the other ends of the plurality of resistors which are connected in parallel are connected with the positive electrode of the diode, the negative electrode of the diode is connected with the source electrode of the MOS tube, and the source electrode of the MOS tube is connected with the control end. A first resistor is further connected between the drain electrode of the MOS tube and the control end, the other ends of the resistors connected in parallel are further connected with one ends of the capacitors connected in parallel, the other ends of the capacitors connected in parallel serve as first connecting ends, and the source electrode of the MOS tube serves as a second connecting end. According to the invention, DS peak voltage of the MOS tube, especially the MOS tube in a push-pull full-bridge circuit, can be effectively absorbed, efficiency attenuation and volume increase caused by high loss of a traditional RCD are reduced, and instability caused by an active clamping circuit is avoided.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to an active RCD absorbing circuit and a control method, which are mainly used for reducing the DS peak voltage of a MOS tube in a push-pull full bridge circuit. Background technique [0002] With the rapid development of power electronics, DC / DC has become a very popular product on the market. Application scenarios where the output is low voltage and high current can be seen everywhere, such as vehicle DC / DC, inverter DC / DC, bidirectional DC / DC, etc. Due to its low-voltage and high-current usage scenarios, the push-pull full-bridge circuit has become the best choice, and the biggest problem with the push-pull full-bridge circuit is that when the low-voltage side MOS is turned off, due to the leakage inductance of the transformer, This results in large spikes and reduces the reliability of the system. [0003] In order to solve the above problems, passive R...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/32H02M1/34
CPCH02M1/32H02M1/34
Inventor 张远鹏张衡张龙
Owner 苏州博沃创新能源科技有限公司