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Gate bus structure and trench gate chip

A gate bus, trench gate technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the difficulty of chip edge trench layout and other issues, and achieve the effects of compatible preparation processes, alleviation of warpage, and easy implementation.

Pending Publication Date: 2022-03-22
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the grooves of the broken line structure in other related technologies are not limited by the shape of the chip, it is difficult to lay out the grooves on the edge of the chip.

Method used

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  • Gate bus structure and trench gate chip
  • Gate bus structure and trench gate chip
  • Gate bus structure and trench gate chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The gate bus structure provided in this embodiment is suitable for trench gate chips, such as trench gate IGBT chips, and the gate bus structure of conventional IGBT chips is as follows: figure 1 As shown, the gate bus structure provided by this embodiment is as follows figure 2As shown, by setting the gate bus trenches under the gate pads of the gate bus area and / or in areas other than the gate pads, warpage caused by trench gate IGBT chips during processing can be effectively alleviated, Moreover, the preparation process is fully compatible with the original process, has no influence on the original process, and is easy to realize. A plurality of gate bus grooves 107 are arranged in the area of ​​the gate bus 103 above the terminal area 101, and a cell area trench 105 extends along the X direction around the emitter pad 104 on the cell area 106, and the gate bus line The grooves 107 form a certain angle, for example, the gate bus groove 107 is along the Y direction,...

Embodiment 2

[0075] This embodiment provides a trench gate chip, including the gate bus structure of Embodiment 1.

[0076] The trench gate chip of this embodiment is realized based on the gate bus structure formed by introducing a plurality of gate bus trenches forming a certain angle (for example, 90°) with the trenches in the cell region in the well region, which can effectively relieve the trench gate chip. The warpage caused by the groove gate chip during processing, and the preparation process is fully compatible with the original process, has no impact on the original process, and is easy to implement.

[0077] In some embodiments, trench gate chips include but are not limited to trench gate IGBT chips or trench gate MOSFET chips.

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Abstract

The invention provides a gate bus structure and a trench gate chip, and the gate bus structure comprises a well region which is formed above a drift region of a first conduction type and has a second conduction type, and the well region intersects with a cellular region trench extending from a cellular region. A plurality of grid bus grooves which form a set angle with the groove direction of the cellular region are formed in the well region so as to relieve the warping of the groove grid chip; an insulating layer formed over the well region; and a gate signal conducting layer formed over the insulating layer. According to the trench gate chip, the plurality of gate bus trenches forming a certain angle with the cell region trench are introduced into the well region, so that warping of the trench gate chip in the processing process can be effectively relieved, the preparation process is completely compatible with the original process, the original process is not influenced, and the trench gate chip is easy to implement.

Description

technical field [0001] The invention belongs to the technical field of trench gate chips, and in particular relates to a gate bus structure and a trench gate chip. Background technique [0002] Chips such as IGBT have two commonly used structures, planar gate and trench gate. The advantages of BJT (Bipolar Junction Transistor, bipolar junction transistor) have the characteristics of low conduction voltage drop, high breakdown voltage, strong short-circuit withstand capability, high switching frequency and low driving power, so it is widely used in almost all It involves the field of electric energy conversion and transmission. Compared with the planar gate structure, the trench gate structure has higher current density and stronger anti-latch-up ability, so it has become the mainstream structure of chips such as IGBT. However, while trench gate chips bring performance advantages, they also put forward higher requirements on the manufacturing process. The stress problem in...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L29/06H01L29/739H01L29/78
CPCH01L29/42312H01L29/42356H01L29/4236H01L29/7393H01L29/78H01L29/0684H01L29/0696
Inventor 姚尧罗海辉肖强梁利晓刘葳管佳宁覃荣震何逸涛
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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