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Sputtering target and manufacturing method thereof, film obtained by the method, film sheet and stacking sheet

A technology of sputtering target and thin film, which is applied in the direction of sputtering plating, coating, metal material coating process, etc. It can solve the problems of inability to use solar cells, current leakage, and decrease of gas blocking performance, so as to improve gas blocking performance, improved productivity, and excellent blocking properties

Active Publication Date: 2013-03-13
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, the back surface protection sheet material disclosed in Patent Document 1 uses metal foil such as aluminum foil as a gas barrier material, so if the sheet material is applied to the back sheet of a solar cell module, the withstand voltage may be lowered and the current may be reduced. leakage
In addition, for a sheet material using metal foil, if the thickness of the metal foil is 20 μm or less, pinholes generated between the heat-resistant and weather-resistant resin and the metal foil will increase, and the gas barrier property will be significantly reduced.
On the other hand, if the thickness of the metal foil is increased, the problem of increased manufacturing cost will arise, and it needs to be classified as waste, and it cannot be used on the light-receiving surface of the solar cell because it does not transmit light. Danger of short circuits caused by metal foil flashing around punched holes for terminals
[0018] In addition, in the case of a film obtained by using a single inorganic oxide such as silica and alumina used in the above-mentioned Patent Documents 2, 5 to 7, in order to obtain high gas barrier properties, the thickness of the film must be ensured. Above 100nm, gas barrier properties are not sufficient even at this size
In addition, when it is a transparent blocking film as an inorganic nitride thin film or an inorganic oxynitride thin film used in the above-mentioned Patent Document 3, there are problems of oxygen contamination and difficult composition control.
In addition, when it is used as the barrier film of the above-mentioned Patent Document 4, if In order to obtain sufficient barrier properties, it is preferable to use a composite film, but there is a problem that the film forming process becomes longer.
In addition, in the case of the invention related to the above-mentioned Patent Document 8, in order to obtain sufficient shielding properties, it is preferable to have a multilayer structure, and there is a problem that the film-forming process becomes longer as in the invention related to the above-mentioned Patent Document 4.

Method used

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  • Sputtering target and manufacturing method thereof, film obtained by the method, film sheet and stacking sheet
  • Sputtering target and manufacturing method thereof, film obtained by the method, film sheet and stacking sheet
  • Sputtering target and manufacturing method thereof, film obtained by the method, film sheet and stacking sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] First, high-purity ZnO powder with an average particle size of 0.8 μm and a purity of 99.8%, and high-purity SiO powder with an average particle size of 1.5 μm and a purity of 99.9% were prepared. 2 Powder, PVB resin as binder, ethanol and acetone as organic solvent.

[0070] Next, ZnO powder, SiO 2 powder, binder and organic solvent, and prepare a slurry with a concentration of 40% by mass. And, ZnO powder and SiO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target was 40 mol %, SiO 2 is 60 mol%.

[0071] Next, the prepared slurry was spray-dried by a spray dryer to obtain a mixed granulated powder with an average particle size of 200 μm, and then the granulated powder was put into a predetermined mold and punched by a uniaxial punching machine. After demolding, the obtained molded body was sintered at a temperature of 1300° C. for 5 hours in an air atmosphere to obtain a sputtering target.

Embodiment 2

[0073] ZnO powder and SiO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target was 60 mol %, SiO 2 Except being 40 mol%, it carried out similarly to Example 1, and obtained the sputtering target.

Embodiment 3

[0075] ZnO powder and SiO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target was 70 mol %, SiO 2 Except being 30 mol%, it carried out similarly to Example 1, and obtained the sputtering target.

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Abstract

The invention provides a sputtering target suitable for forming a film having excellent transparent and gas shielding performances and a manufacturing method thereof, the film obtained by the method, a film sheet and a stacking sheet. A zinc oxide-silicon dioxide group sputtering target consists of zinc oxide and silicon dioxide as a main component. The relative density of the sintered compact is 95% or more. The molar ratio of zinc oxide and silicon dioxide is 40:60-95:5.

Description

technical field [0001] The present invention relates to a sputtering target suitable for forming a thin film excellent in various properties such as transparency and gas barrier properties, a method for producing the sputtering target, a thin film obtained by using the target, a thin film sheet and a laminated sheet including the thin film. More specifically, it relates to a sputtering target for forming a thin film which is excellent in these various properties and is especially suitable as a gas barrier material such as a liquid crystal display, an organic EL display, electronic paper, or a solar cell module, and a method for manufacturing the same, A thin film obtained by using the target, a thin film sheet and a laminated sheet including the thin film. Background technique [0002] Devices such as liquid crystal displays, organic EL displays, or solar cells are usually not able to withstand moisture, and their characteristics rapidly deteriorate due to moisture absorptio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08C04B35/453C04B35/14
Inventor 樱井英章有泉久美子
Owner MITSUBISHI MATERIALS CORP
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