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Graphene transparent conductive film and preparation method and application thereof

A transparent conductive film, graphene film technology, applied in the direction of the conductive layer on the insulating carrier, etc., can solve the problems of wrinkles and discontinuities of the conductive film, and achieve the effect of excellent performance, high conductivity, and smooth refresh effect.

Pending Publication Date: 2022-03-25
HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned problems in the existing graphene transparent conductive film prepared by the existing chemical vapor deposition method, the present invention provides a graphene transparent conductive film and its preparation method and application. The graphene transparent conductive film solves the problem of preparing graphite by chemical vapor deposition Wrinkles and discontinuities are a problem for olefin conductive films, and excellent electrochemical performance is achieved

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  • Graphene transparent conductive film and preparation method and application thereof
  • Graphene transparent conductive film and preparation method and application thereof
  • Graphene transparent conductive film and preparation method and application thereof

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Embodiment 1

[0027] A preparation method of graphene transparent conductive film, comprising the following steps:

[0028] a. Open the vacuum valve of the reaction furnace, evacuate the reaction furnace, and raise the temperature in the reaction furnace to 900°C, then feed methane and argon (the volume ratio of methane and argon is 1:3), and adjust the ventilation valve Let methane and argon enter the reaction furnace evenly, carry out the chemical vapor deposition reaction for 10 minutes, and carbon atoms are deposited on the single crystal silicon substrate under the argon medium to form a graphene film;

[0029] b. The reaction furnace is evacuated, and the temperature in the reaction furnace is adjusted to 280° C., and low-density polyethylene is introduced to make the low-density polyethylene (density 0.90 g / cm 3 ) carry out fusion reaction 2min (mass ratio of graphene film and low-density polyethylene is 100:1) with above-mentioned graphene film in reaction furnace, realize melt blen...

Embodiment 2

[0033] A preparation method of graphene transparent conductive film, comprising the following steps:

[0034] a. Open the vacuum valve of the reaction furnace, evacuate the reaction furnace, and raise the temperature in the reaction furnace to 920°C, then feed methane and argon (the volume ratio of methane and argon is 2:3), and adjust the ventilation valve Let methane and argon enter the reaction furnace uniformly, carry out the chemical vapor deposition reaction for 12 minutes, and carbon atoms are deposited on the single crystal silicon substrate under the argon medium to form a graphene film;

[0035] b. The reaction furnace is evacuated, and the temperature in the reaction furnace is adjusted to 290°C, and low-density polyethylene is introduced to make the low-density polyethylene (density 0.93g / cm 3 ) carry out fusion reaction 3min (mass ratio of graphene film and low-density polyethylene is 100:1.2) with above-mentioned graphene film in reaction furnace, realize melt bl...

Embodiment 3

[0038] A preparation method of graphene transparent conductive film, comprising the following steps:

[0039] a. Open the vacuum valve of the reaction furnace, evacuate the reaction furnace, and raise the temperature in the reaction furnace to 950°C, then feed methane and argon (the volume ratio of methane and argon is 2:5), and adjust the ventilation valve Let methane and argon enter the reaction furnace uniformly, carry out the chemical vapor deposition reaction for 15 minutes, and carbon atoms are deposited on the single crystal silicon substrate under the argon medium to form a graphene film;

[0040] b. The reaction furnace is evacuated, and the temperature in the reaction furnace is adjusted to 300°C, and low-density polyethylene is introduced to make the low-density polyethylene (density 0.95g / cm 3 ) carry out fusion reaction 6min (the mass ratio of graphene film and low-density polyethylene is 100:1.5) with above-mentioned graphene film in reaction furnace, realize mel...

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Abstract

The invention relates to the technical field of material synthesis, and particularly discloses a graphene transparent conductive film and a preparation method and application thereof. The preparation method of the graphene transparent conductive film comprises the following steps: a, mixing methane serving as a carbon source with protective gas, and performing chemical vapor deposition reaction to form a graphene film on a substrate; b, carrying out melt blending on the graphene film and low-density polyethylene according to a mass ratio of 100: (1-1.5) under a vacuum condition of 280-300 DEG C to obtain a blend; and c, under a vacuum condition, preparing the graphene transparent conductive film from the blend through a physical vapor deposition method. The preparation method of the graphene transparent conductive film provided by the invention solves the problem that the surface of the graphene film prepared by a vapor deposition method has some wrinkles and is discontinuous, so that a special composite film formed by graphene and polyethylene has high transparency and high conductivity.

Description

technical field [0001] The invention relates to the technical field of material synthesis, in particular to a graphene transparent conductive film and its preparation method and application. Background technique [0002] With the increasing innovation of science and technology, people's requirements for electronic smart devices are getting higher and higher. The touch screen is an extremely important part of the flexible OLED display. Its basic principle is that when a finger or other object touches the touch screen mounted on the front of the display, the touched position (in the form of coordinates) is detected by the touch screen controller, and It is sent to the CPU through the interface to determine the input information. The mainstream technology of touch screen is resistive touch screen and capacitive touch screen, and its core is ITO (indium tin oxide) conductive layer. The conductive layer has high light transmittance and strong conductivity, but because its main ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L23/06C08K3/04C08J5/18H01B5/14
CPCC08J5/18H01B5/14C08J2323/06C08K3/042
Inventor 王秋君朱伟琪张迪王波李昭进王欢
Owner HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
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