Pre-melting device for pre-melting silicon supplied to main crucible and control method thereof

Abstract

The present invention relates to a pre-melting apparatus for pre-melting silicon supplied to a main crucible and a method for controlling the same, the apparatus being capable of precisely measuring the amount of molten silicon fed into a silicon ingot growth crucible, thereby being capable of effectively controlling the amount of molten silicon fed into the silicon ingot growth crucible. Disclosed is a pre-melting apparatus for pre-melting silicon supplied to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible on which a silicon ingot grows after receiving and heating a solid silicon material into silicon in a molten state; a preliminary crucible moving module for inclining the preliminary crucible toward one of a first position in which the solid silicon material or the molten silicon is loaded in the preliminary crucible and a second position in which the molten silicon in the preliminary crucible flows to the main crucible; and a control unit for controlling the preliminary crucible moving module.

Description

technical field [0001] The present invention relates to a premelting device for premelting silicon supplied to a main crucible and a control method thereof, and more particularly, to a premelting device for premelting silicon supplied to a main crucible and a control method thereof, the device The input amount of molten silicon injected into the silicon ingot growth crucible can be precisely measured, so that the input amount can be effectively controlled. Background technique [0002] Single crystal silicon is a basic material used for most semiconductor components, and these substances are produced as single crystals with high purity, and one of these production methods is the pulling method. [0003] In a general silicon ingot growth apparatus used in this pulling method, a silicon ingot is grown by slowly pulling a seed crystal of silicon single crystal on the surface of molten silicon charged in a crucible. [0004] In this pulling method, the method of continuously in...

AI Technical Summary

Problems solved by technology

[0008] This kind of preparatory crucible is made of quartz material with low pollution and high heat resistance. If the main body, partition plate, and supply pipe of this kind of preparatory crucible are made of quartz material, it will increase the cost and cause damage when handling each part. risks will increase

[0009] In addition, when the high-temperature process ends, the volume expansion that occurs when the remaining molten silicon solidifies may cause damage to the main body and supply pipes, etc. Since the expensive quartz material components can only be used for the first time, the cost may increase and there is a risk. Increased disadvantages, such as the need to pay great attention to shocks in process operations, etc.

[0010] In order to prevent the above-mentioned disadvantages, the above-mentioned preliminary crucible is also heated when the process is not in operation, and it is also necessary to separately install a heating system for heating the molten silicon so that the temperature of the molten silicon does not drop in each transfer section, so the design is complicated, Improve the manufacturing cost of equipment and increase energy consumption

[0011] In addition, molten silicon is deposited and solidified at the outlet of the supply pipe for supplying molten silicon to the silicon ingot growth crucible, and the supply pipe is blocked, so that the supply of molten silicon cannot be continued, and eventually the operation of the silicon ingot growth apparatus needs to be stopped and carried out. Maintenance, such as this, will affect the continuous operation of the equipment, thereby reducing productivity, and there is a problem that it is difficult to produce silicon ingots with uniform quality

Images