Epitaxial structure with quantum dot layer, manufacturing method thereof and light emitting diode chip

Abstract

According to the epitaxial structure with the quantum dot layer, the manufacturing method of the epitaxial structure and the light-emitting diode chip, the quantum dot active layer serves as an active region, and due to the fact that the quantum dot layer has a limiting effect on current carriers in the three-dimensional direction, the light-emitting efficiency of the light-emitting diode chip can be improved, and the light-emitting efficiency of the light-emitting diode chip is improved. And high brightness can be realized even under low current. And moreover, the quantum dot active layer is used as an active region, and the Al component does not need to be improved in order to obtain a relatively short light-emitting wavelength, so that the internal quantum efficiency of the light-emitting diode chip is relatively high. Moreover, the In component of the non-doped layer is made to be larger than the In component of the N-type barrier layer, so that the non-doped layer and the substrate material have large positive mismatch, a good condition is provided for growth of the quantum dot layer, and the manufacturing quality of the light-emitting diode chip is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and more particularly, to an epitaxial structure with a quantum dot layer, a manufacturing method thereof, and a light-emitting diode chip. Background technique [0002] In recent years, with the rapid development of light-emitting diode chips based on AlGaInP, the traditional devices with multiple quantum wells as the active region structure are also quite mature. Quaternary system (Al X Ga 1-X ) 0.5 In 0.5 The P material has a wide band gap, and as the Al composition changes in the range of 0 to 0.5, the emission wavelength can vary from 650 nm for red light to 550 nm for yellow-green light. As the wavelength becomes shorter, the Al composition needs to increase continuously, but the increase of Al composition will make the AlGaInP material change from direct band gap to indirect band gap, resulting in lower internal quantum efficiency and lower device brightness. In addition...

AI Technical Summary

Problems solved by technology

As the wavelength becomes shorter, the Al composition needs to increase continuously, but the increase of the Al composition will make the AlGaInP material change from a direct band gap to an indirect band gap, resulting in low internal quantum efficiency and low brightness of the device

In addition, the peak efficiency of micro-sized light-emitting diode chips will shift to high current, and the luminous efficiency will drop sharply under low current. So how to improve the luminous efficiency of the device is a big problem facing micro-light-emitting diode chips.

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