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Photoelectrochemical flexible wearable sweat pH sensor based on bismuth oxide p-n type conversion potential

A photoelectrochemical and pH sensor technology, applied in the direction of material electrochemical variables, scientific instruments, instruments, etc., can solve problems such as inaccurate measurement, achieve the effect of solving inaccurate measurement, low preparation cost, and high application value

Active Publication Date: 2022-04-05
INST OF ANALYSIS GUANGDONG ACAD OF SCI (CHINA NAT ANALYTICAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the invention is to provide a kind of based on bismuth oxide (Bi 2 o 3 )p-n-type transition potential photoelectrochemical flexible wearable sweat pH sensor, using amphoteric Bi for the first time 2 o 3 As a photoelectrode, the semiconductor uses its unique p-n transition potential as a sensing signal, which can adapt to the complex wearing environment, and can well resist the interference of changes in light intensity and changes in the area of ​​the sensing electrode covered by sweat, and realize accurate and continuous pH value of sweat. monitoring, which solves the problem of inaccurate measurement of existing technologies

Method used

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  • Photoelectrochemical flexible wearable sweat pH sensor based on bismuth oxide p-n type conversion potential
  • Photoelectrochemical flexible wearable sweat pH sensor based on bismuth oxide p-n type conversion potential
  • Photoelectrochemical flexible wearable sweat pH sensor based on bismuth oxide p-n type conversion potential

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] A Bi-based 2 o 3 Photoelectrochemical flexible wearable sweat pH sensor with p-n type transition potential, including Bi 2 o 3 Working electrode, reference electrode, counter electrode, transparent flexible substrate and light source. The width of the working electrode, reference electrode and counter electrode is 5mm, and the electrode spacing is 1.5mm (such as figure 1 shown), the light source is 0.2W, and the wavelength is 440nm.

[0047] Bi 2 o 3 Preparation steps of the working electrode:

[0048] (1) Deposit an indium-doped tin oxide (ITO) film on a transparent and flexible mica substrate by radio frequency magnetron sputtering, using an indium-doped tin oxide (ITO) target with a purity of 99.99%, and a sputtering power of 100W , the substrate temperature is 200° C., the argon flow rate is 30 sccm, the sputtering pressure is 1.5 pa, the deposition time is 2400 s, and the substrate rotation speed is 20 r / min.

[0049] (2) Deposit Bi metal on the ITO thin f...

Embodiment 2

[0064] With reference to Example 1, the difference is that Bi 2 o 3 Preparation of working electrode, reference electrode and counter electrode.

[0065] Bi 2 o 3 Preparation steps of the working electrode:

[0066] (1) Deposit an indium-doped tin oxide (ITO) film on a transparent and flexible mica substrate by radio frequency magnetron sputtering, using an indium-doped tin oxide (ITO) target with a purity of 99.99%, and a sputtering power of 150W , the substrate temperature is 350° C., the argon flow rate is 30 sccm, the sputtering pressure is 2 pa, the deposition time is 1200 s, and the substrate rotation speed is 30 r / min.

[0067] (2) Deposit Bi metal on the ITO thin film obtained in step (1) by DC magnetron sputtering, using a Bi metal target with a purity of 99.99%, the sputtering power is 60W, the substrate temperature is 350°C, and the argon flow rate is 50sccm, the sputtering pressure is 2pa, the deposition time is 100s, and the substrate rotation speed is 30r / mi...

Embodiment 3

[0076] Referring to Example 1, the difference lies in the preparation of the counter electrode.

[0077] Preparation steps of the counter electrode:

[0078] Graphite was deposited on flexible polyester (PET) by DC magnetron sputtering, using a graphite target with a purity of 99.99%, the sputtering power was 100W, the substrate temperature was 200°C, the argon flow rate was 30sccm, and the sputtering pressure was 1.0 pa, the deposition time is 60 min, and the substrate rotation speed is 30 r / min to obtain the counter electrode.

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Abstract

The photoelectrochemical flexible wearable sweat pH sensor comprises a bismuth oxide working electrode, a reference electrode, a counter electrode, a transparent flexible substrate and a light source, an bipolar bismuth oxide semiconductor is adopted as a photoelectrode for the first time, and the specific p-n type conversion potential of the bipolar bismuth oxide semiconductor is used as a sensing signal; and the photoelectrochemical flexible wearable sweat pH sensor is prepared. The sensor can adapt to a complex wearing environment, can well resist interference of light intensity changes and sensing electrode area changes covered by sweat, is low in preparation cost, simple, portable and easy to use, achieves accurate and continuous monitoring of the pH value of the sweat, has high application value, and solves the problem of inaccurate measurement in the prior art.

Description

Technical field: [0001] The invention relates to the technical field of photoelectrochemical sensing, in particular to a photoelectrochemical flexible wearable sweat pH sensor based on bismuth oxide p-n type transition potential. Background technique: [0002] The pH value of human sweat can provide a lot of important information about health status. Various skin diseases (such as dermatitis, acne and fungal infection, etc.) will cause changes in the pH value of sweat. Provide important reference [Balaji A N, Yuan C, et al.pH Watch-Leveraging pulseoximeters in existing wearables for reusable, real-time monitoring of pH insweat[C].The 17th Annual International Conference.2019:262-274.]. [0003] Using flexible wearable sensors to monitor sweat pH is an effective method. Compared with traditional sensors, flexible wearable sensors are not only lighter, more beautiful, and more comfortable, but also can achieve continuous monitoring [Yu Mengke, Zhang Guojun. A review of the ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/327G01N27/48
CPCG01N27/327G01N27/4167
Inventor 汪福宪董博恒卫莉玲
Owner INST OF ANALYSIS GUANGDONG ACAD OF SCI (CHINA NAT ANALYTICAL
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