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Semiconductor structure and forming method thereof

A semiconductor and structural material technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of improving performance, improving symmetry, and improving consistency

Pending Publication Date: 2022-04-12
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limitations of the manufacturing process, the performance of the semiconductor structure still needs to be further optimized and improved

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0021] As described in the background art, due to the limitations of the manufacturing process, the performance of the semiconductor structure still needs to be further optimized and improved. The analysis and description will now be carried out in conjunction with specific embodiments.

[0022] Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of each step of a method for forming a semiconductor structure.

[0023] Please refer to figure 1 , providing the layer to be etched 100 ; forming a number of core mold structures 110 on the layer to be etched 100 ; depositing a spacer material layer 120 on the surface of the layer to be etched 100 and the surface of the core mold structure 110 .

[0024] Please refer to figure 2 , etch back the sidewall material layer 120 until the top surface of the core mold structure 110 is exposed, and a sidewall 121 is formed on the sidewall surface of the core mold structure 110, and the sidewall 121 has opposite inner...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a to-be-etched layer; a plurality of core mold structures are formed on the to-be-etched layer, and in the direction perpendicular to the side wall faces of the core mold structures, the top edges of the core mold structures stretch out towards the outer sides of the core mold structures; forming a side wall material layer on the surfaces of the core mold structure and the to-be-etched layer; and etching the side wall material layer until the top surface of the core mold structure is exposed by adopting an anisotropic etching process, and forming a side wall on the side wall surface of the core mold structure. Therefore, the performance of the semiconductor structure is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the advancement of semiconductor manufacturing technology, in order to achieve faster operation speed, larger data storage capacity and compatibility with more functions of semiconductor devices, many different methods have been adopted in the prior art to reduce the feature size (CD) to achieve The purpose of increasing the integration density of semiconductor chips. Among them, Self-Aligned Multiple Patterning (SAMP) is widely used in various semiconductor manufacturing technologies. SAMP first uses a photolithography process to form a core pattern (Mandrel or Core), and then one or more times. Spacer structures are formed on the sidewalls on both sides of each mandrel pattern. Finally, the mandrel pattern is removed by a selective etching process, and the densit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308
Inventor 汪刘建毕晓峰张冬平
Owner SEMICON MFG INT (SHANGHAI) CORP
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