High-density substrate structure and processing method thereof
A technology of high-density substrates and processing methods, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as increasing process difficulty, redundant processing process, and lowering product yield, and achieves improved wiring density, The effect of reducing dielectric loss and reducing lead-out distance
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[0042] A high-density substrate structure, including a carrier 101 and a through-silicon via chip 201; a carrier metal post 102 is provided in the carrier 101, and a carrier metal post 102 is provided at the upper and lower ends of the carrier metal post 102. Stud bumps 103; interconnected vertical TSV chip metal studs 202 are provided in the TSV chips 201, and TSV chip metal stud bumps 203 are provided at the upper end of the TSV chip metal studs 202;
[0043] A hollow area is provided in the middle of the carrier 101, the TSV chip 201 is provided in the hollow area, and a second coating film 304 is provided between the carrier 101 and the TSV chip 201. A first cladding film 301 is provided between the adjacent carrier metal stud bumps 103 on the front of the board 101 and between the adjacent carrier metal stud bumps 103 on the back of the corresponding carrier 101 ;
[0044] A second wiring layer 309 of a new substrate is provided on the TSV metal stud bump 203 and the corr...
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