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High-density substrate structure and processing method thereof

A technology of high-density substrates and processing methods, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as increasing process difficulty, redundant processing process, and lowering product yield, and achieves improved wiring density, The effect of reducing dielectric loss and reducing lead-out distance

Pending Publication Date: 2022-04-29
WUXI ZHONGWEI GAOKE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of the capability of the traditional substrate processing technology and the fact that the larger through-hole diameter of the Core material cannot meet the processing needs of small-aperture products, the only way to increase the number of substrate layers and expand the The volume of the substrate is used to increase the terminal, which not only greatly increases the difficulty of the process, but also reduces the product yield due to the cumbersome processing process.

Method used

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  • High-density substrate structure and processing method thereof
  • High-density substrate structure and processing method thereof
  • High-density substrate structure and processing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0042] A high-density substrate structure, including a carrier 101 and a through-silicon via chip 201; a carrier metal post 102 is provided in the carrier 101, and a carrier metal post 102 is provided at the upper and lower ends of the carrier metal post 102. Stud bumps 103; interconnected vertical TSV chip metal studs 202 are provided in the TSV chips 201, and TSV chip metal stud bumps 203 are provided at the upper end of the TSV chip metal studs 202;

[0043] A hollow area is provided in the middle of the carrier 101, the TSV chip 201 is provided in the hollow area, and a second coating film 304 is provided between the carrier 101 and the TSV chip 201. A first cladding film 301 is provided between the adjacent carrier metal stud bumps 103 on the front of the board 101 and between the adjacent carrier metal stud bumps 103 on the back of the corresponding carrier 101 ;

[0044] A second wiring layer 309 of a new substrate is provided on the TSV metal stud bump 203 and the corr...

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Abstract

The invention relates to a high-density substrate structure and a processing method thereof, a silicon through hole chip is arranged in a hollow area of a carrier plate, a new substrate second wiring layer is arranged on a silicon through hole chip metal column convex block and a corresponding carrier plate metal column convex block, a new substrate second metal convex block is arranged on the new substrate second wiring layer, and a new substrate second metal convex block is arranged on the new substrate second wiring layer. A new substrate third wiring layer is arranged on the new substrate third wiring layer; a new substrate first wiring layer is arranged on the lower end part of the silicon through hole chip metal column and the corresponding support plate metal column bump, a new substrate first metal bump is arranged on the new substrate first wiring layer, and a new substrate fourth wiring layer is arranged on the new substrate first metal bump; and solder mask layers are arranged on the new substrate third wiring layer and the new substrate fourth wiring layer. According to the invention, the wiring density per unit area of the high-density substrate is improved, the size and the thickness are reduced, and the dielectric loss under high frequency is reduced.

Description

technical field [0001] The invention relates to the technical field of substrate processing, in particular to a high-density substrate structure and a processing method thereof. Background technique [0002] With the continuous advancement of integrated circuit technology, more and more electronic products are developing in the direction of miniaturization, lightness and intelligence. As the main packaging component of electronic chips, high-density substrates rely on their high-integration circuit density and complex and diverse customization requirements for multi-layer interconnection, which has prompted great progress in the research of high-density substrates in processing technology. [0003] Embedded substrates are an advanced technical solution in the field of packaging. IC chips, resistors or capacitors can be implanted inside the substrate. The volume of the packaged substrate is the volume of the substrate embedded with chips, so one of the technical advantages of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L21/60H01L21/48H01L21/52H01L23/00H01L23/13H01L23/485
CPCH01L23/49811H01L23/49827H01L23/13H01L23/4824H01L23/485H01L21/52H01L24/03H01L21/486H01L2224/0231H01L2224/02331H01L2224/02381H01L2224/02372
Inventor 安东张爱兵李轶楠
Owner WUXI ZHONGWEI GAOKE ELECTRONICS