High-electron-mobility transistor epitaxial wafer capable of improving preparation efficiency and preparation method

Abstract

The invention provides a high-electron-mobility transistor epitaxial wafer capable of improving preparation efficiency and a preparation method, and belongs to the technical field of semiconductor devices. The Ni sub-layer and the Ni-AlN alloy sub-layer are stacked on the silicon substrate, and the Ni sub-layer is high in density, so that the quality of an epitaxial material grown on the Ni sub-layer is improved. The connection effect between the Ni-AlN alloy sub-layer on the Ni sub-layer and the Ni sub-layer is good, gallium nitride materials grow on the Ni-AlN alloy sub-layer in a heterogeneous nucleation mode and then grow on the basis of crystal nucleuses, the nucleation work of the heterogeneous nucleation is low, the AlGaN buffer layer doped with Al and the Ni-AlN alloy sub-layer are made of homogeneous materials, rapid growth can be achieved, and the performance of the AlGaN buffer layer is improved. Meanwhile, heterogeneous nucleation also exists in the AlGaN buffer layer, rapid growth of the AlGaN buffer layer can be promoted, the quality of the AlGaN buffer layer can be guaranteed, and the preparation efficiency of the finally obtained high-electron-mobility transistor is effectively improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a high electron mobility transistor epitaxial wafer and a preparation method for improving preparation efficiency. Background technique [0002] HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is a heterojunction field effect transistor, which is widely used in various electrical appliances. The HEMT epitaxial wafer is the basis for preparing HEMT devices. The HEMT epitaxial wafer includes a substrate and an AlN layer, an AlGaN buffer layer, a GaN high resistance layer, a GaN channel layer, an AlGaN barrier layer and a GaN capping layer stacked on the substrate in sequence. [0003] HEMT epitaxial wafers are often grown using a silicon substrate as a substrate, but there is a large lattice mismatch between the silicon substrate and the gallium nitride material, even if an AlN layer and an AlGaN layer are added between the silicon...

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Problems solved by technology

[0003] HEMT epitaxial wafers are often grown using a silicon substrate as a substrate, but there is a large lattice mismatch between the silicon substrate and the gallium nitride material, even if an AlN layer and an AlGaN layer are added between the silicon substrate and the gallium nitride material buffer layer to relieve lattice mismatch, the quality of gallium nitride materials such as GaN high resistance layer grown on the AlGaN buffer layer; if grow gallium nitride material at a lower growth rate to improve the The quality of gallium nitride materials such as high-resistance layers, the growth efficiency of HEMT epitaxial wafers is not ideal

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