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Reference voltage and voltage doubling circuit

A voltage doubling circuit and reference voltage technology, applied in the field of microelectronics, can solve the problems of increasing integrated chip area, increasing resistance, etc., and achieve the effect of small channel modulation effect, reducing area and improving stability

Active Publication Date: 2022-05-10
深圳市诚芯微科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the related technologies mentioned above, the inventors found that: the reference voltage doubler circuit usually obtains the corresponding reference voltage by setting the proportional relationship of the resistance, and the resistance consumes. In the field of low power consumption circuits, in order to reduce the consumption of the resistance, usually The method is to increase the area of ​​the resistor, which will increase the area of ​​the integrated chip

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0048] refer to Figure 6 The reference voltage and voltage doubler circuit includes a bandgap reference circuit 10 and a reference voltage doubler circuit 20, the bandgap reference circuit 10 is used to generate a bandgap reference voltage VBG.

[0049] The reference voltage doubler circuit 20 includes a MOS transistor N1, a current mirror unit 21 and a voltage doubler unit 22. The MOS transistor N1 adopts an N-type MOS transistor. The gate of the MOS transistor N1 is connected to the output end of the bandgap reference circuit 10, and the MOS transistor N1 The drain is connected to the current mirror unit 21, the source of the MOS transistor N1 is grounded, the current mirror unit 21 is connected to the power supply VDD, one end of the voltage doubler unit 22 is connected to the current mirror unit 21, and the other end of the voltage doubler unit 22 is grounded.

[0050] Wherein, the MOS transistor N1 adopts an isolated MOS transistor, which can better isolate the interfere...

Embodiment 2

[0062] refer to Figure 7 The difference between this embodiment and Embodiment 1 is that the output end of the bandgap reference circuit 10 is also connected to a filter unit 30. In this embodiment, the filter unit 30 includes a resistor R4 and a capacitor C, and one end of the resistor R4 is connected to The output end of the bandgap reference circuit 10 is connected, the other end of the resistor R4 is connected to the gate of the MOS transistor N1 and one end of the capacitor C, and the other end of the capacitor C is grounded.

[0063] The resistor R4 and the capacitor C1 form an RC filter network to filter the bandgap reference voltage signal VBG into a VBG_RC voltage signal, which can improve the stability of the reference voltage.

Embodiment 3

[0065] refer to Figure 8 The difference between this embodiment and Embodiment 2 is that the current mirror unit 21 also includes a MOS transistor P3, the MOS transistor P3 adopts a P-type MOS transistor, the source of the MOS transistor P3 is connected to the power supply VDD, and the gate of the MOS transistor P3 It is connected to the gate of the MOS transistor P1, and the drain of the MOS transistor P3 is connected to the reference voltage unit 40.

[0066] The reference voltage unit 40 includes a MOS transistor N5. The MOS transistor N5 is an N-type MOS transistor. The drain of the MOS transistor N5 is connected to the drain of the MOS transistor P3 and the gate of the MOS transistor N5. The source of the MOS transistor N5 is grounded. Wherein, the width of the MOS transistor N5 is 2um, and the length of the MOS transistor N5 is 20um. The voltage VGS generated on the MOS transistor N5 is equal to the bandgap reference voltage, therefore, the gate voltage of the MOS tran...

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Abstract

The invention discloses a reference voltage and voltage doubling circuit, and belongs to the technical field of microelectronics, the reference voltage doubling circuit comprises a band-gap reference circuit and a reference voltage doubling circuit, the reference voltage doubling circuit comprises an MOS tube N1, a current mirror unit and a voltage doubling unit, the MOS tube N1 adopts an N-type MOS tube, the grid electrode of the MOS tube N1 is connected with the output end of the band-gap reference circuit, and the current mirror unit is connected with the output end of the band-gap reference circuit. The drain electrode of the MOS transistor N1 is connected with the current mirror image unit, the source electrode of the MOS transistor N1 is grounded, the current mirror image unit is connected with a power supply VDD, one end of the voltage-multiplying unit is connected with the current mirror image unit, and the other end of the voltage-multiplying unit is grounded. According to the invention, the MOS tube is used for replacing a voltage network composed of a bipolar transistor and a resistor or a voltage network composed of an operational amplifier and a resistor network, so that the circuit can be simplified, the W / L ratio of the MOS tube is adjusted, and the circuit can better adapt to a low-power-consumption circuit.

Description

technical field [0001] The present application relates to the technical field of microelectronics, in particular to a reference voltage and a voltage doubler circuit. Background technique [0002] The bandgap reference circuit is the basic module of the analog and digital-analog hybrid circuit system, which is used to provide a stable reference voltage for the analog and digital-analog hybrid circuit. [0003] At present, in the reference circuit, it usually includes a bandgap reference circuit and a reference voltage doubler circuit. The bandgap reference voltage is 1.2V, and the reference voltage doubler circuit is used to generate a reference voltage doubled by the reference voltage 1.2V. Usually, the reference voltage is 1.2V. V, 2.4V, 3.6V, etc. [0004] In view of the related technologies mentioned above, the inventors found that: the reference voltage doubler circuit usually obtains the corresponding reference voltage by setting the proportional relationship of the r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/26
CPCG05F3/26Y02B70/10
Inventor 何刚彭琪曹建林
Owner 深圳市诚芯微科技股份有限公司
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