Plasma etching machine and etching method thereof

Abstract

The invention discloses a plasma etching machine and an etching method thereof.The plasma etching machine comprises an etching box, a radiation box is fixedly arranged on the etching box, a radiation cavity is formed in the radiation box, an etching cavity is formed in the etching box, an annular connecting cavity is formed in the upper side wall of the etching cavity, a gas box is arranged on the upper side of the connecting cavity in a communicating mode, and a fixing plate is fixedly arranged on the peripheral wall of the radiation cavity; the lower end face of the fixed plate is slidably connected with two arc-shaped semi-sliding sleeves which are symmetrical left and right, the peripheries of the semi-sliding sleeves are wound with coils, the lower end face of the etching cavity is provided with a crucible, the upper end face of the crucible is fixedly provided with a detachable placing table, and gas on the upper side of the fixed plate is pushed to move downwards through a push plug; the concentration of etching gas between the two half sliding sleeves is kept, the working efficiency of the plasma etching device is indirectly improved by keeping the gas concentration, etching with different requirements is achieved by changing the radius of the half sliding sleeves and controlling the impact amount of plasma, and the plasma density is further changed and the etching effect is improved by changing the number of turns of the coil.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a plasma etching machine and an etching method thereof. Background technique [0002] Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electron area forms a plasma, and the resulting ionized gas and gas composed of released high-energy electrons form a plasma or ion , when the ionized gas atoms are accelerated through an electric field, they release enough force with surface repelling forces to tightly bond materials or etch surfaces. [0003] When most of the current plasma etching machines are working, the plasma may bombard the surface of the substrate unevenly, resulting in poor etching results. At the same time, it is impossible to quickly adjust the etching rate and reduce production efficiency. Contents of the invention [0004] The object of the present invention is to provide a plasma etching machine and its et...

AI Technical Summary

Problems solved by technology

[0003] When most of the current plasma etching machines are working, the plasma may bombard the surface of the substrate unevenly, resulting in poor etching results. At the same time, it is impossible to quickly adjust the etching rate and reduce production efficiency.

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