N-type bismuth telluride-based thermoelectric material and preparation method and application thereof
A bismuth telluride-based, thermoelectric material technology, applied in thermoelectric device node lead wire materials, chemical instruments and methods, manufacturing/processing of thermoelectric devices, etc., can solve the problem of poor processing and production of micro-refrigeration devices, and increase the cost of thermoelectric devices , uneven performance distribution and other problems, to achieve the effect of industrial scale production, excellent mechanical performance and low cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0055] This embodiment provides an N-type bismuth telluride-based thermoelectric material and a preparation method thereof. The chemical formula of the N-type bismuth telluride-based thermoelectric material is Bi 1.8 Sb 0.2 Te 2.7 Se 0.3 ; Described preparation method comprises the steps:
[0056] (1) Bi particles, Sb particles, Te particles and Se particles with a purity of 99.99% are mixed in a molar ratio of 1.8:0.2:2.7:0.3, and the vacuum degree is 1×10 -5 Pa is smelted. During smelting, the temperature is raised to 500°C at a rate of 2°C / min for the first-stage smelting, and the holding time is 30 minutes, and then the temperature is raised to 950°C at a rate of 1°C / min for the second-stage smelting. The holding time is 3h, and the first alloy is obtained by cooling;
[0057] (2) After pulverizing the first alloy described in step (1) to a particle size of 150 mesh, spark plasma sintering at 450° C. and 60 MPa for 5 minutes to obtain a second alloy;
[0058] (3) Forg...
Embodiment 2
[0062] This embodiment provides an N-type bismuth telluride-based thermoelectric material and a preparation method thereof. The chemical formula of the N-type bismuth telluride-based thermoelectric material is Bi 1.85 Sb 0.15 Te 2.8 Se 0.2 ; Described preparation method comprises the steps:
[0063] (1) Bi particles, Sb particles, Te particles and Se particles with a purity of 99.95% were mixed in a molar ratio of 1.85:0.15:2.8:0.2, and the vacuum degree was 1×10 -4Pa is smelted. During smelting, the temperature is raised to 450°C at a rate of 3°C / min for the first-stage smelting, and the holding time is 50 minutes, and then the temperature is raised to 1000°C at a rate of 2°C / min for the second-stage smelting. The holding time is 4h, and the first alloy is obtained by cooling;
[0064] (2) After crushing the first alloy described in step (1) to a particle size of 300 mesh, spark plasma sintering at 480° C. and 40 MPa for 3 minutes to obtain a second alloy;
[0065] (3) T...
Embodiment 3
[0067] This embodiment provides an N-type bismuth telluride-based thermoelectric material and a preparation method thereof. The chemical formula of the N-type bismuth telluride-based thermoelectric material is Bi 1.82 Sb 0.18 Te 2.85 Se 0.15 ; Described preparation method comprises the steps:
[0068] (1) Bi particles, Sb particles, Te particles and Se particles with a purity of 99.95% were mixed in a molar ratio of 1.82:0.18:2.85:0.15, and the vacuum was 5×10 -5 Pa is smelted. During smelting, the temperature is raised to 550°C at a rate of 3°C / min for the first-stage smelting, and the holding time is 20 minutes, and then the temperature is raised to 900°C at a rate of 1.5°C / min for the second-stage smelting. The holding time is 5h, and the first alloy is obtained by cooling;
[0069] (2) After crushing the first alloy described in step (1) to a particle size of 30 mesh, spark plasma sintering at 400° C. and 50 MPa for 8 minutes to obtain a second alloy;
[0070] (3) The...
PUM
| Property | Measurement | Unit |
|---|---|---|
| particle size (mesh) | aaaaa | aaaaa |
| thermoelectric figure of merit | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


