Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for pulse chemical vapor deposition of Al2O3 film layer

A chemical vapor deposition and film technology, which is applied in chemical instruments and methods, chemical/physical processes, gaseous chemical plating, etc. Avoid surface deterioration and crystal form transformation, process safety and control, and facilitate the effect of vapor deposition

Active Publication Date: 2022-05-13
SICHUAN UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can solve the problems that the liquid deposition technology is not easy to form a dense film layer and the common vapor deposition technology has high temperature and high risk

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for pulse chemical vapor deposition of Al2O3 film layer
  • Method for pulse chemical vapor deposition of Al2O3 film layer
  • Method for pulse chemical vapor deposition of Al2O3 film layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Pulse Chemical Vapor Deposition of Al 2 o 3 Film layer for surface modification of TiO 2 Catalyst, the specific process is as follows:

[0051] In this embodiment, a fixed-bed reactor with a volume of 4.1 L is used for the pulse chemical vapor deposition process.

[0052] Uncoated TiO 2 The average diameter of the catalyst particles is 30 nm.

[0053] Pulse Chemical Vapor Deposition of Al 2 o 3 Film layer for surface modification of TiO 2 Catalysts to improve TiO 2 The effect of photocatalytic degradation of organic pollutants, including the following steps:

[0054] (1) Pretreatment: 0.6g uncoated TiO 2 The catalyst was dispersed on the porous distribution plate built in the reactor, and dried at 120 °C for 2 h, and the TiO 2 Carry out heating pretreatment.

[0055] (2) Clearing: 0.5g precursor AlCl 3 Place at the bottom of the reactor, seal the reactor, and then evacuate to remove the air in the reactor.

[0056] (3) The first half-reaction: the reactor i...

Embodiment 2

[0065] Pulse Chemical Vapor Deposition of Al 2 o 3 Film layer for surface modification of TiO 2 Pigment, the specific process is as follows:

[0066] In the already coated SiO 2 TiO 2 The surface of the pigment, then deposit Al by the method in the present invention 2 o 3 Floor.

[0067] Uncoated TiO 2 The particle size of the pigment is 100-250nm.

[0068] Pulse Chemical Vapor Deposition of Al 2 o 3 Film layer for surface modification of TiO 2 Pigment, and pigment is applied in water-based paint, investigates its weatherability, comprises the following steps:

[0069] (1) Pretreatment: 0.6gTiO 2 / SiO 2 The pigment is dispersed on the porous distribution plate built in the reactor, dried at 120°C for 2 hours, and the pigment is pretreated by heating.

[0070] (2) Clearing: 0.5g precursor AlCl 3 Place at the bottom of the reactor, seal the reactor, and then evacuate to remove the air in the reactor.

[0071] (3) The first half-reaction: the reactor is heated to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for pulse chemical vapor deposition of an Al2O3 film layer. Comprising the following steps: (1) pretreatment; (2) removing; (3) first half reaction; (4) partial removal; (5) second half reaction; and (6) removing. The deposition temperature is lower than the reaction temperature of chemical vapor deposition and metal organic chemical vapor deposition, the conditions are milder, and the process is safer and more controllable. The deposition method provided by the invention is simple to operate, the thickness of the Al2O3 film layer is controllable, and the obtained film layer is very uniform and compact. The deposition temperature is lower than the reaction temperature of chemical vapor deposition and metal organic chemical vapor deposition, and the conditions are milder. The adopted precursors are AlCl3 and H2O which are safe and easy to obtain.

Description

technical field [0001] The invention belongs to the technical field of pulse chemical vapor deposition, in particular to a pulse chemical vapor deposition Al 2 o 3 film method. Background technique [0002] Titanium dioxide (TiO 2 ) is a multifunctional material widely used in catalysts, white pigments, photovoltaic solar cells, catalyst supports, UV absorbers, etc. to TiO 2 Modification can improve its performance, which is of great significance in practical application. TiO 2 It is a typical semiconductor material with photocatalytic activity. Under the excitation of ultraviolet light, it can generate highly active free radicals (OH, O 2 - ) degrades organic molecules. On the one hand, research in the fields of water treatment, air purification, and solar cells has focused on the utilization and improvement of TiO 2 photocatalytic activity; on the other hand, in coatings, plastics, paper and other industries, it is often necessary to inhibit TiO 2 photocatalytic ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455B01J21/06B01J35/00B01J37/34C09C1/36C09C3/06
CPCC23C16/403C23C16/45523C23C16/4417B01J21/063B01J37/34C09C1/3653C09C3/063B01J35/39
Inventor 钟山杨柯黄先良唐思扬岳海荣马奎刘长军宋磊梁斌
Owner SICHUAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com