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Piezoelectric material layer with microstructure array and its preparation method and application

A technology of microstructure arrays and piezoelectric materials, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of high processing cost, long preparation time, and low acoustic frequency of the piezoelectric layer to ensure Structural stability, easy cracking and low processing cost

Active Publication Date: 2022-06-24
淄博高新技术产业开发区MEMS研究院 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the size of the microstructure array that can be processed by 3D printing technology is relatively large, and the most advanced 3D printing technology in China can generally only process a size of 100 array of microstructures above
Moreover, 3D printing is difficult to use hard materials (such as silicon) as printing materials, and the cost is high and the speed is slow.
However, laser cutting technology can only process microstructure arrays in a straight line cutting method, and it is difficult to control the morphology of microstructure arrays. The surface of microstructure arrays is not smooth and rough, and the preparation time is long and the processing cost is high.
[0005] In addition, the acoustic frequency of the microstructure array piezoelectric layer prepared by traditional piezoelectric slurry and degreasing and curing process is low, and the formed microstructure array structure is unstable, difficult to degrease, and easy to collapse or crack

Method used

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  • Piezoelectric material layer with microstructure array and its preparation method and application
  • Piezoelectric material layer with microstructure array and its preparation method and application
  • Piezoelectric material layer with microstructure array and its preparation method and application

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preparation example Construction

[0034] One aspect of the present invention provides a method for preparing a piezoelectric material layer with a microstructure array, comprising the following steps:

[0035] The microstructure array is prepared by etching on the surface of the pre-oxidized silicon wafer by the MEMS process; the microstructure array is immersed in the PZT ceramic slurry by the reverse molding process, and the PZT ceramic slurry is degreasing, solidified, and sintered. The volume percentage of PZT ceramics in the PZT ceramic slurry is 70% to 80%, and the degreasing and curing temperature is at least divided into three temperature gradients below 600° C. for staged degreasing and curing.

[0036] In some embodiments, the specific conditions for the staged degreasing and curing may include: warming from room temperature to 200°C, and holding for 20min-40min; warming from 200°C to 400°C, holding for 10min-30min; warming from 400°C to 600°C, holding for 20min-40min; 5min~15min. Preferably, the spec...

Embodiment 1

[0063] 1) Microstructure array layout

[0064] like figure 1 As shown in (a) and (b), the A1~E5 areas are divided according to the requirements, and the microstructure arrays are arranged, and the heights of the microstructure arrays are all 80 , the shape, arrangement, size, spacing and number of microstructure arrays are shown in Tables 1 and 2. The specific distribution of microstructure array monomers is shown in Tables 1 and 2. figure 2 shown.

[0065] 2) MEMS processing process flow

[0066] Take the thickness as 400 , the resistance is 0.001 ~0.005 The double-sided polished 6-inch silicon wafer was soaked in SPM solution for 6 minutes, rinsed, and then the wafer was soaked in SC-1 solution for 6 minutes, rinsed, and then the wafer was soaked in SC-2 solution. 6min, after rinsing, spin dry;

[0067] A thickness of 2 is grown on the surface of the above-mentioned silicon wafer by a thermal oxidation process SiO 2 , the thermal oxidation temperature is 1050℃...

Embodiment 2

[0078] The preparation method of this embodiment is basically the same as that of embodiment 1, and the difference lies in that the layout parameters of the microstructure array are different. Specific steps are as follows:

[0079] 1) Microstructure array layout

[0080] Layout the microstructure array as shown in Table 3, the height of the microstructure array is 80 .

[0081] 2) MEMS processing process flow

[0082] Take the thickness as 400 , the resistance is 0.001 ~0.005 The double-sided polished 6-inch silicon wafer was soaked in SPM solution for 6 minutes, rinsed, and then the wafer was soaked in SC-1 solution for 6 minutes, rinsed, and then the wafer was soaked in SC-2 solution. 6min, after rinsing, spin dry;

[0083] A thickness of 2 is grown on the surface of the above-mentioned silicon wafer by a thermal oxidation process SiO 2 , the thermal oxidation temperature is 1050℃, and the time is 14h;

[0084] After treating the surface of the silicon wafer ...

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Abstract

The invention relates to the technical field of micro-nano processing, in particular to a piezoelectric material layer with a microstructure array and its preparation method and application. The preparation method of the piezoelectric material layer with the microstructure array includes the following steps: using MEMS technology to etch the surface of the pre-oxidized silicon chip to prepare the microstructure array; The PZT ceramic slurry is degreased, solidified and sintered; the volume percentage of PZT ceramics in the PZT ceramic slurry is 70%-80%; the degreasing and curing temperature is divided into at least 3 temperature gradients below 600°C for degreasing and curing in stages. The morphology of the piezoelectric material layer with the microstructure array prepared by the invention can be flexibly adjusted, and the size is small.

Description

technical field [0001] The present invention relates to the technical field of micro-nano processing, in particular, to a piezoelectric material layer with a micro-structure array and a preparation method and application thereof. Background technique [0002] Piezoelectric effect refers to the phenomenon that the electric polarization intensity produced in some natural or synthetic materials changes under the action of mechanical stress. The piezoelectric effect can be understood as the mutual conversion of mechanical deformation and electrical signals, which is the energy conversion process of "force" and "electricity", referred to as "transduction". The piezoelectric effect can be divided into positive piezoelectric effect and inverse piezoelectric effect. The positive piezoelectric effect is embodied in that the entire material will generate a measurable potential difference; the phenomenon that piezoelectric materials will deform under the action of an electric field is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/39H01L41/187B06B1/06B81C1/00C04B35/491C04B35/638H10N30/093H10N30/853
CPCB81C1/00214B06B1/0644C04B35/491C04B35/638C04B2235/6022H10N30/8554H10N30/093
Inventor 刘通黄世峰阮勇牟言鹏曹丽霞宋志强何长运周祥亮
Owner 淄博高新技术产业开发区MEMS研究院