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Two-end synaptic device based on multi-carbonyl semiconductor sodium ion storage and preparation method of two-end synaptic device

A technology of synaptic devices and semiconductors, applied in the field of two-terminal synaptic devices based on polycarbonyl semiconductor sodium ion storage and its preparation, to achieve the effect of high-precision pattern recognition

Pending Publication Date: 2022-05-13
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Solved the selectivity and ion dynamics of the difficult biomimetic sodium ion channel in the synaptic device of the solid film, and a series of synaptic plasticity endowed by it

Method used

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  • Two-end synaptic device based on multi-carbonyl semiconductor sodium ion storage and preparation method of two-end synaptic device
  • Two-end synaptic device based on multi-carbonyl semiconductor sodium ion storage and preparation method of two-end synaptic device
  • Two-end synaptic device based on multi-carbonyl semiconductor sodium ion storage and preparation method of two-end synaptic device

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Embodiment 1

[0044] Such as figure 2 As shown, a method for preparing a two-terminal synaptic device based on polycarbonyl semiconductor sodium ion storage includes the following steps:

[0045] In step S1, a 1.5×1.5 cm ITO glass substrate (100) is prepared, and the substrate is provided with patterned ITO as a bottom electrode (101). The substrate was ultrasonically treated with acetone, isopropanol, and deionized water for 15 minutes in sequence, and the ultrasonicated substrate was dried.

[0046] In step S2, the PTCDA semiconductor functional layer (102) is prepared on the ITO glass substrate (101) using a vacuum evaporation apparatus: put the substrate on the sample holder of the evaporation system and fix it, and put the sample holder into the evaporation chamber In the evaporation crucible, put 100-200mg of PTCDA in the evaporation crucible and then close the cavity; at this time, start the cooling system and the compression pump, turn on the power supply of the evaporation system...

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Abstract

The invention relates to a two-end synaptic device based on polycarbonyl semiconductor sodium ion storage and a preparation method thereof, and belongs to the technical field of organic semiconductor electronic devices. The two-end synapse device is prepared by taking a multi-carbonyl semiconductor as a semiconductor functional layer and a solid electrolyte containing sodium ions as an ion supply layer. According to the invention, the continuous modulation of the conductivity state of the device is realized by utilizing the high-density sodium ion storage / release characteristic of the multi-carbonyl semiconductor and the excellent dynamics, the synaptic plasticity of biological nerves is deeply simulated according to the electrochemical principle, and a full-connection neural network is simulated. The solid-state thin film device is highly bionic, is expected to be integrated on a large scale, and is applied to future neuromorphic chips.

Description

technical field [0001] The invention relates to the field of organic semiconductor electronic devices, in particular to a two-terminal synaptic device based on polycarbonyl semiconductor sodium ion storage and a preparation method thereof. Background technique [0002] The development of synaptic devices that simulate biological information processing is crucial to the hardware implementation of brain-inspired computing systems. Two-terminal synaptic devices can record changes in voltage and current according to their resistance states, and their continuously modulated resistance and memory states are very similar to biological synapse responses, and the devices are easy to implement cross-array integration, so it is expected to realize large-scale integrated class brain computing system. [0003] Synapse is the functional link between biological neurons and the key part of information transmission. In the process of information transmission, the influx of sodium ions will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/05H01L51/40
CPCH10K71/12H10K85/00H10K10/50
Inventor 林宗琼翁洁娜杨波戴彦谷李倩黄维张晓孙骏毅
Owner NORTHWESTERN POLYTECHNICAL UNIV
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