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Direct modulation laser diode with GSG coplanar electrode and manufacturing method thereof

A laser diode and coplanar technology, applied in lasers, laser components, semiconductor lasers, etc., can solve problems such as high microwave loss, achieve small thermal resistance, improve thermal effects and high temperature characteristics

Inactive Publication Date: 2022-05-27
LUXNET CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Generally, in order to simplify the structure and reduce the cost, a microstrip line (microstrip line) waveguide structure is used, but the microstrip line structure will lead to higher microwave loss

Method used

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  • Direct modulation laser diode with GSG coplanar electrode and manufacturing method thereof
  • Direct modulation laser diode with GSG coplanar electrode and manufacturing method thereof
  • Direct modulation laser diode with GSG coplanar electrode and manufacturing method thereof

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Embodiment Construction

[0038] figure 1 It is a top-view structural schematic diagram of the direct modulation laser diode with GSG coplanar electrodes of the present invention, such as figure 1 As shown, a direct modulation laser diode 10 has an N-type semiconductor layer 102 , a dielectric material insulating layer 104 , a P-type electrode 106 , an N-type electrode 107 , an N-type electrode 108 and an N-type electrode 109 .

[0039] figure 2 for figure 1 A-A sectional view, image 3 for figure 1 B-B cross-sectional view, the direct modulation laser diode 10 further has a semi-insulating semiconductor substrate 100 , a light-emitting layer 110 and a P-type semiconductor layer 112 . The structure of a direct modulation laser diode with GSG coplanar electrodes is as follows figure 2 As shown in the figure, after the fabrication process of the waveguide structure is completed, the pattern of the insulating layer is defined by division and the fabrication is completed. Finally, the P and N-type m...

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Abstract

The invention discloses a direct modulation laser diode with GSG coplanar electrodes. The direct modulation laser diode is provided with a semi-insulating semiconductor substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a dielectric material insulating layer, a P-type electrode and two N-type electrodes. The device is characterized in that the two N-type electrodes are arranged on the N-type semiconductor layer and connected to the upper portion of the dielectric material insulating layer along the side wall of the dielectric material insulating layer to form a coplanar plane, and the P-type electrode and the two N-type electrodes are GSG (ground-signal-ground) coplanar electrodes. The hybrid coplanar waveguide structure has a high direct modulation speed, and can be integrated with a flip-chip technology, thereby reducing the signal transmission loss caused by packaging and routing, reducing the heat effect caused by the element, and greatly improving the photoelectric characteristics of high frequency and element operation at high temperature.

Description

technical field [0001] The invention relates to a laser diode element, in particular to a direct modulation laser diode with GSG coplanar electrodes and a manufacturing method thereof. Background technique [0002] In order to achieve higher differential gain, improve output power and achieve higher-speed response frequency, it is generally achieved by changing material properties, quantum well structure and short waveguide, but the use of short waveguide will increase the difficulty of manufacturing process and packaging. [0003] Generally, in order to simplify the structure and reduce the cost, a microstrip line waveguide structure is used, but the microstrip line structure will lead to higher microwave losses. SUMMARY OF THE INVENTION [0004] The present invention utilizes the high-speed hybrid coplanar transmission line structure made of GSG (ground-signal-ground) coplanar electrodes to cooperate with the semi-insulating substrate, which can effectively reduce the pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/024H01S5/20
CPCH01S5/0427H01S5/04254H01S5/04256H01S5/02461H01S5/02469H01S5/02476H01S5/20
Inventor 吴侑伦
Owner LUXNET CORP
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