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Silicon negative electrode material and preparation method and application thereof

A silicon anode and silicon-manganese alloy technology, applied in the field of materials, can solve the problems of polluted environment, electrochemical performance degradation, low yield, etc., and achieve the effects of simple processing process, increased active sites, and increased contact area.

Active Publication Date: 2022-05-31
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the significant volume expansion (~300%) of the silicon material during charging and discharging, its electrochemical performance decays rapidly, making it difficult to achieve commercial applications.
Researchers mainly use methods such as nanostructure design or compounding with other materials to improve its electrochemical performance. Reducing the size of silicon particles and designing special structures can significantly reduce the absolute volume change of silicon, but the preparation method of this silicon material is complicated. , low yield, high technical cost, environmental pollution and other problems limit its popularization and application

Method used

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  • Silicon negative electrode material and preparation method and application thereof
  • Silicon negative electrode material and preparation method and application thereof
  • Silicon negative electrode material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Take 1g Mn 60 Si 14 The powder was used as a precursor, slowly added to 100mL HCl solution (12mol / L), and reacted at room temperature for 120h until no bubbles appeared. The reactants were centrifuged and vacuum-filtered, washed and dried in vacuum at 80° C. for 24 hours.

[0029] according to figure 1 and figure 2 The comparison of the XRD diagrams shows that after the silicon-manganese alloy is treated with hydrochloric acid, there is no peak of Mn element in the figure, indicating that the Mn element disappears. according to image 3 and Figure 4 It can be seen from the comparison of the SEM images that image 3 It is the shape of manganese-silicon alloy before etching, and no layered structure appears. After hydrochloric acid etching treatment, Figure 4 There is an obvious layered structure, and the etching is very obvious, indicating that the Mn element has reacted with hydrochloric acid. Tested by EDS from Figure 5 It can be seen that all Mn elements...

Embodiment 2

[0031] Take 1g Mn 60 Si 14 The powder was used as a precursor, slowly added to 200mL HCl solution (6mol / L), and reacted at room temperature for 120h until no bubbles appeared. The reactants were centrifuged and vacuum-filtered, washed and dried in vacuum at 80° C. for 24 hours.

Embodiment 3

[0033] Take 1g Mn 60 Si 14 The powder was used as a precursor, slowly added to 160mL HCl solution (7.5mol / L), and reacted at room temperature for 120h until no bubbles appeared. The reactants were centrifuged and vacuum-filtered, washed and dried in vacuum at 80° C. for 24 hours.

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Abstract

The invention relates to a silicon negative electrode material and a preparation method and application thereof, a layered high-purity silicon material is obtained by carrying out acid treatment on silicon-manganese alloy with large reserves, and the defects of silicon can be made up by utilizing the ductility, mechanical property, conductivity and the like of metal of the layered high-purity silicon material. Strong acid is used for treating the silicon-manganese alloy, and compared with a traditional chemical vapor deposition and template induction synthesis method, the treatment process is simple and free of pollution. And compared with other alloys, the silicon-manganese alloy is low in cost and large in reserves, the silicon material subjected to acid treatment is purer, and the layered material formed after etching is more obvious.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a silicon negative electrode material and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Silicon material is abundant in reserves and has a wide range of sources, making it an ideal anode material for lithium batteries. However, due to the significant volume expansion (~300%) of the silicon material during charging and discharging, its electrochemical performance decays rapidly, making it difficult to achieve commercial applications. Researchers mainly use methods such as nanostructure design or compounding with other mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021C01B33/037H01G11/30H01M4/38H01M10/0525
CPCC01B33/021C01B33/037H01M4/386H01M10/0525H01G11/30H01M2004/027Y02E60/10
Inventor 冯金奎王正冉
Owner SHANDONG UNIV