High-thermal-conductivity self-repairing thermal interface material and preparation method thereof

A thermal interface material and self-healing technology, applied in the direction of heat exchange materials, chemical instruments and methods, can solve problems such as cracks, damage and heat dissipation, and achieve high thermal conductivity, improve dispersion, and increase thermal conductivity.

Pending Publication Date: 2022-05-31
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, in the actual application process, the different thermal expansion coefficients among the substrate, chip and thermal interface material may cause cracks on the surface or inside of the thermal interface material, which seriously damages its heat dissipation capability

Method used

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  • High-thermal-conductivity self-repairing thermal interface material and preparation method thereof
  • High-thermal-conductivity self-repairing thermal interface material and preparation method thereof
  • High-thermal-conductivity self-repairing thermal interface material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] (1) the aluminum powder (78.4g) of particle diameter 20um, the zinc oxide (3.6g) of particle diameter 2um are stirred at 1000rpm rotating speed in planetary mixer for 10min, then take out blended aluminum powder / zinc oxide for subsequent use;

[0057] (2) the temperature of reaction was increased to 150°C, 30g of lipoic acid was added to the round-bottomed flask equipped with a mechanical stirring device, a reflux condenser and an inert protection device, and then the above-mentioned blended aluminum powder / zinc oxide filler and 0.18g were added successively. N,N'-methylenebisacrylamide, and stirring for 10min to obtain a thermally conductive elastomer;

[0058] (3) Pour the mixture obtained in step (2) into polytetrafluoroethylene molds of different sizes, cool and demold, and obtain samples of different sizes for later use.

Embodiment 2

[0060] Except that in step (1), the aluminum powder (78.4g) with a particle size of 20um and zinc oxide with a particle size of 2um (3.6g) were replaced with aluminum powder (84g) with a particle size of 20um and zinc oxide (6g) with a particle size of 2um. All are the same as Example 1.

Embodiment 3

[0062] In step (1), aluminum powder (78.4g) with a particle size of 20um and zinc oxide with a particle size of 2um (3.6g) were replaced with aluminum powder with a particle size of 20um (89.6g) and zinc oxide with a particle size of 2um (8.4g) , and the rest are the same as in Example 1.

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Abstract

The invention discloses a high-thermal-conductivity self-repairing thermal interface material and a preparation method thereof. The thermal interface material comprises the following raw materials: a polymer containing a carboxylic acid functional group, a thermal conductive filler, a metal oxide and/or alkali metal salt, the metal oxide can react with a carboxylic acid group in the polymer containing the carboxylic acid functional group to generate carboxylate; the alkali metal salt can react with carboxylic acid groups in the polymer containing carboxylic acid functional groups to generate carboxylate. The high-thermal-conductivity self-repairing thermal interface material provided by the invention has high thermal conductivity (1.5-10W/mK) and low contact thermal resistance (0.05-3.0 K.cm < 2 >. W <-1 >), and can realize basic recovery of mechanical properties and thermal conductivity after being repaired at 80 DEG C for 12 hours.

Description

technical field [0001] The invention belongs to the technical field of high-performance and multifunctional thermal interface materials, relates to the technical field of preparing thermally conductive elastomers by a one-pot blending process, and in particular relates to a high thermal conductivity self-repairing thermal interface material and a preparation method thereof. Background technique [0002] In recent years, with the development of GPU, artificial intelligence computing and cloud computing, microprocessors are developing in the direction of small size, high integration and high power. The problem of thermal management of microprocessors has become a bottleneck for improving its accuracy and reliability. Current data centers consume more than 200TWh of electricity per year, however, more than 50% of the total electricity is used to remove waste heat, not for data storage or computing. The key to achieving high thermal conductivity lies in how to reduce the filler...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L81/04C08L83/07C08K3/08C08K3/22C09K5/14
CPCC08K3/08C08K3/22C09K5/14C08K2003/0812C08K2003/2296C08L81/04C08L83/04
Inventor 任琳琳范剑锋何冬逸纪迎港文志斌曾小亮胡煜琦孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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