Structure and method for resolving parasitic plasma in plasma processing equipment

Abstract

The invention discloses a structure and a method for solving parasitic plasma in plasma process equipment, and belongs to the field of plasma process equipment. A first gas channel of the structure is communicated with a fine-hole insulating pipe and a second gas channel, and the fine-hole insulating pipe is used for feeding process gas into a gas distribution box assembly; an on-off valve is arranged between the second gas channel and the first gas channel, and the second gas channel is used for feeding cleaning gas into the gas distribution box assembly. Therefore, on one hand, the on-off valve can be closed before processing, and the cleaning gas with the preset pressure is introduced into the coarse-hole insulating pipeline and the second gas channel, so that a relatively high-pressure environment is formed in the coarse-hole insulating pipeline and the second gas channel; and on the other hand, the gas path of the process gas and the gas path of the cleaning gas are separately arranged, so that the gas path of the process gas can be set to be very small in inner diameter, the process gas is prevented from being electrolyzed before entering the process cavity and parasitic plasmas are prevented from being generated, and the probability of explosion and damage of the insulating tube caused by the parasitic plasmas is effectively reduced.

Description

technical field [0001] The present invention relates to the technical field of plasma processing equipment, and more particularly, to a structure and method for solving parasitic plasma in a plasma processing equipment. Background technique [0002] Plasma process equipment, such as plasma-enhanced chemical vapor deposition (PECVD), is commonly used to deposit thin films on semiconductor wafers, flat panel substrates, solar cells, and liquid crystal display substrates. This is accomplished in a vacuum chamber on the piece. The process gas is energized into a plasma by applying RF power to the chamber through a gas distribution box assembly located near the top of the vacuum chamber through an RF source coupled to the vacuum chamber. The excited gas adheres to the surface of the substrate and reacts to form a film layer, and the substrate is maintained at a specific temperature by a heating device. The gas diffusion assembly is usually connected to the RF power supply, or V...

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the consumption of radio frequency power and the easy generation of parasitic plasma in the insulating tube when the plasma process equipment in the prior art performs vacuum coating processing. Insufficiency of bursting and damage of insulating tubes provides a structure and method for solving parasitic plasma in plasma process equipment, aiming at preventing parasitic plasma from being generated in insulating tubes

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