Preparation method of hole functional layer and preparation method of quantum dot light-emitting diode
A technology of quantum dot luminescence and functional layer, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve the problem of high annealing temperature, reduce thermal damage, improve luminous efficiency and stability
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[0017] The present application provides a method for preparing a hole functional layer, such as Figure 1 As shown, the preparation method comprises the following steps:
[0018] S01: Solution of deposited cavitation functional materials;
[0019] S02: Annealing was carried out under the condition of ≤120 °C to obtain the hole functional layer,
[0020] Wherein, the solvent in the cavitation functional material solution comprises a first solvent and a second solvent, the boiling point of the second solvent is lower than the boiling point of the first solvent.
[0021]The preparation method of the hole functional layer provided in the present application, the solution for forming the cavity functional material for film formation is selected comprising a mixed solvent of the first solvent and the second solvent, because the boiling point of the second solvent is lower than the boiling point of the first solvent, so that the dew point of the cavity functional material solution is redu...
Embodiment 1
[0041] A quantum dot light-emitting diode, from bottom to top, includes: anode, hole transport layer, quantum dot light emitting layer, electron transport layer and cathode. The preparation of the hole transport layer of this quantum dot LED consists of the following steps:
[0042]TFB is dissolved in a mixed solvent composed of n-hexane and chlorobenzene to give a solution of the hole transport material; The volume ratio of n-hexane and chlorobenzene is 1:4. The above hole transport material solution is deposited on the anode, annealed at 120 °C for 30 min, and the hole transport layer is obtained.
[0043] Because the boiling point under atmospheric pressure of n-hexane is 69 °C, the dew point temperature of the mixed solution is reduced after mixing with chlorobenzene, so that the annealing temperature of the hole transport layer is reduced.
Embodiment 2
[0045] A quantum dot light-emitting diode, from bottom to top, includes: cathode, electron transport layer, quantum dot light emitting layer, hole transport layer and anode. The preparation of the hole transport layer of this quantum dot LED consists of the following steps:
[0046] PVK is dissolved in a mixed solvent composed of n-pentane and chlorobenzene to give a solution of the cavity transport material; Among them, the volume ratio of n-pentane and chlorobenzene is 1:1. The above hole transport material solution is deposited on the quantum dot luminescent layer, annealed at 70 °C for 30 min, and the hole transport layer is obtained.
[0047] The boiling point of n-pentane under atmospheric pressure is 36.1 °C, and the dew point temperature of the mixed solution is reduced after mixing with chlorobenzene, so that the annealing temperature of the hole transport layer is reduced.
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