Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof

A technology of natural cleavage and consistency, applied in the field of devices for preparing natural cleavage surfaces of semiconductor laser wafers with high length consistency, can solve the problems of expensive equipment, low efficiency, inconsistent length of natural cleavage surfaces, etc., and achieve consistent length Good performance, easy cleavage, time- and cost-saving effects

Pending Publication Date: 2022-06-03
Shandong Huaguang Optoelectronics Co. Ltd.
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AI-Extracted Technical Summary

Problems solved by technology

[0007] If the manual process is used, the diamond knife will not be able to accurately position the position of the knife, resulting in inconsistent lengths of the natural cleavage ...
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Method used

(2) after pre-baking, wafer 8 is placed in the groove of photolithography mask plate 4, and the side that is coated with photoresist on wafer 8 contacts with groove, and the cut surface 10 of wafer and The limiting flat side 3 of the groove is in contact, and the circumference of the wafer 8 is in contact with the arc edge of the groove; the wafer 8 is limited by the groove to ensure that the exposure position remains consistent;
In the photolithographic mask plate 4, the light transmission area 1 position must be parallel with the limit flat edge 3, although the cut ...
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Abstract

The invention relates to a device for preparing a natural cleavage surface of a high-length-consistency semiconductor laser wafer and a use method of the device, the device provides a novel photoetching mask and a vacuum fixed base, the wafer is exposed on the photoetching mask after being glued, then developing and etching are carried out, a deep groove structure is prepared on the wafer, and the high-length-consistency natural cleavage surface of the high-length-consistency semiconductor laser wafer is obtained. Fixing the wafer on a vacuum fixing base, and enabling the deep groove structure on the wafer to be suspended; and applying pressure from the right side of the deep groove structure of the wafer by adopting a cutter, so that the wafer is naturally broken, and a natural cleavage surface of the wafer is obtained. The length of the natural cleavage surface of the wafer prepared by the device provided by the invention has high consistency.

Application Domain

Final product manufactureSemiconductor laser structural details

Technology Topic

ChemistrySemiconductor +4

Image

  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof
  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof
  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof

Examples

  • Experimental program(2)
  • Comparison scheme(1)

Example Embodiment

[0050] Example 1
[0051] A device for preparing the natural cleavage surface of a semiconductor laser wafer with high length consistency, such as figure 1 , figure 2 and image 3 As shown, including the photolithography mask 4 and the vacuum fixing base 14,
[0052] The surface of the photolithography mask 4 is provided with a groove, and the groove is used to limit the wafer 8. The shape of the groove is the same as that of the wafer 8. The shape of the groove includes a limit flat edge 3 and a The limit flat edge 3 is an arc edge connected end to end, the limit flat edge 3 is used to limit the cutting surface 10 of the wafer, and the arc edge is used to limit the circumference of the wafer 8; the groove includes a light-transmitting area 1 and opaque area 2, the transparent area 1 is set at the edge of the groove, and the transparent area 1 is parallel to the limit flat edge 3, the transparent area 1 is used to form the transparent area 1 on the wafer 8 deep groove structures 12 with the same shape and position;
[0053] The cut surface 10 of the wafer is obtained by cutting and grinding after marking with a crystal orientation meter, such as Figure 4 shown.
[0054] The vacuum fixing base 14 is provided with a number of vacuum suction holes 5. The vacuum suction holes 5 are used to fix the wafer 8 having the deep groove structure 12. The wafer 8 fixed on the vacuum fixing base 14 is cut by the cutter 13, so that the wafer The deep groove structure 12 of the wafer 8 is naturally fractured along the (110) direction to obtain the natural cleavage plane 11 of the wafer 8 .
[0055] In the lithography mask 4, the position of the light-transmitting area 1 must be parallel to the limiting flat edge 3. Although the cut surface of the wafer 8 itself is not 110, its deviation is very small, and the length of the deep groove itself is very small, which is affected by The force fracture will strictly follow the (110) plane fracture, so the (110) plane can be guaranteed to be obtained by cleavage on the wafer 8. The light-transmitting area 1 set on the photolithography mask 4 can make the position of the deep groove on the wafer 8 fixed, which can ensure the fixed length of the natural cleavage surface 11 and achieve the high consistency of the length of the natural cleavage surface 11 of the wafer 8 sex.
[0056] The depth of the groove is 40-50 μm higher than the thickness of the wafer 8 ; the diameter of the groove is 1-2 mm larger than the diameter of the wafer 8 . So that the wafer 8 can be smoothly placed in the groove after the photoresist is applied.
[0057] The length of the light-transmitting area 1 is 30 mm, and the width of the light-transmitting area 1 is 10 μm.
[0058] The material of the photolithography mask 4 is K9 glass, and the material of the opaque area 2 is a chrome layer. No coating is provided on the light-transmitting area 1 .
[0059] like image 3 As shown, the shape of the bottom surface 6 of the vacuum fixing base includes a flat edge 16 and a circular arc connected end to end with the flat edge 16,
[0060] The arc-shaped bottom surface is also provided with a rib, the shape of the rib is adapted to the shape of the wafer 8, the middle of the rib is a limit flat rib 7, and the two ends of the limit flat rib 7 are symmetrically provided with circles. The arc-shaped rib 17 and the limiting flat rib 7 are used to limit the cut surface 10 of the wafer, and the arc-shaped rib 17 is used to limit the circumference of the wafer 8 .
[0061] The distance from the flat edge 16 to the flat limiting edge 7 is smaller than the distance from the flat limiting edge 3 on the groove to the light-transmitting area 1 . When the wafer 8 with the deep groove structure 12 is fixed on the vacuum fixing base 14 , the deep groove structure 12 is located outside the vacuum fixing base 14 and is in a suspended state, which facilitates the cleavage of the wafer 8 .
[0062] The center of the bottom surface 6 of the vacuum fixing base is provided with several vacuum suction holes 5 in a cross shape, and one side of the flat side 16 is also provided with several vacuum suction holes 5 in parallel. It is ensured that the suction force is maximum at the flat side 16, and this structure allows the deep trench structure 12 on the wafer 8 to be suspended.

Example Embodiment

[0063] Example 2
[0064] Based on the method for preparing the device for the natural cleavage surface of a semiconductor laser wafer with high length consistency provided in Embodiment 1, the method includes:
[0065] (1) Coating photoresist on the backside of the wafer 8; in step (1), the photoresist is a positive photoresist.
[0066] (2) After pre-baking, the wafer 8 is placed in the groove of the photolithography mask 4, the side coated with photoresist on the wafer 8 is in contact with the groove, and the cut surface 10 of the wafer is in contact with the groove. The limit flat edge 3 is in contact, and the circumference of the wafer 8 is in contact with the arc edge of the groove; the wafer 8 is limited by the groove to ensure that the exposure position remains consistent;
[0067] (3) Expose and develop the wafer 8; the processed wafer 8 is as follows Figure 4 As shown, one side of the wafer has a chamfer 9 of the wafer. In step (3), the photolithography mask 4 is irradiated and exposed by using an ultraviolet lamp or a mercury lamp.
[0068] (4) After etching, the deep trench structure 12 is prepared on the wafer 8;
[0069] In step (4), the length of the deep groove structure 12 on the wafer 8 is 30 mm, the width of the deep groove structure 12 is 10 μm, and the depth of the deep groove structure 12 is 5-10 μm.
[0070] (5) fixing the wafer 8 obtained in step (4) on the vacuum fixing base 14, so that the deep groove structure 12 on the wafer 8 is located outside the flat edge 16 on the vacuum fixing base 14, and the deep groove structure 12 is suspended;
[0071] (6) Using the cutter 13 to apply pressure from the right side of the deep groove structure 12 of the wafer 8 to naturally fracture the wafer 8 to obtain the natural cleavage surface 11 of the wafer 8 . like Figure 5 and Image 6 A schematic diagram of a three-dimensional structure and a schematic diagram of a side structure when the wafer 8 is cleaved are respectively.
[0072] The wafer 8 finally prepared by this method is as follows Figure 8 shown.
[0073] In step (6), the cutter 13 applies pressure in a vertical downward pressing manner. Such a pressing method can ensure that the side of the wafer 8 with the deep trench structure 12 contacts the tool 13 first and begins to be stressed.
[0074] In step (6), as Figure 7 As shown, the cutter 13 is in contact with the right side of the deep groove structure 12, and the angle 15 between the cutter and the wafer contact surface is 2 to 3°, so that the deep groove structure 12 of the wafer 8 is naturally broken along the (110) direction. , the natural cleavage surface 11 is obtained. The function of the inclination angle is to make the tool 13 contact the position of the deep trench structure 12 first and start to apply pressure, so that the wafer 8 starts to be fractured from the position of the deep trench structure 12 .
[0075] Steps (1) to (7) are all carried out under a yellow light environment. Therefore, the photoresist on the wafer 8 is not exposed, and subsequent removal and re-coating are not required, and the photoresist can be directly used for photolithography.
[0076] After cleavage, the length of the natural cleavage surface 11 is as follows Figure 8 As shown in Table 1, the length of the natural cleavage plane 11 for preparing 10 wafers 8 for cleavage by this method is shown in Table 1.
[0077] Table 1
[0078] film number Length (unit mm) 1 20.02 2 20.04 3 20.01 4 20.04 5 20.02 6 20.01 7 20 8 20.03 9 20.05 10 20.01
[0079] It can be seen from Table 1 that, by the method provided in this embodiment, the average length of the natural cleavage surface 11 of the wafer 8 is 20.02 mm, and the standard deviation is 0.015.

PUM

PropertyMeasurementUnit
Length20.0 ~ 30.0mm
Width8.0 ~ 10.0µm
Length30.0mm

Description & Claims & Application Information

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