Silicon nitride waveguide auxiliary cantilever beam end face coupler
A silicon nitride wave and end-face coupling technology, applied in the direction of optical waveguide light guide, instrument, light guide, etc., can solve the problems of low coupling efficiency and polarization sensitivity, and achieve the effect of improving coupling efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0063] like Figures 1 to 8 As shown, this embodiment provides a silicon nitride waveguide assisted cantilever beam end coupler, including a silicon substrate 1 , a silicon nitride waveguide structure 2 , a silicon waveguide structure 3 , a connecting beam structure 4 and a cantilever beam structure 5 . The cantilever beam structure 5 is connected and arranged on the connecting beam structure 4, the connecting beam structure 4 is connected and arranged on the silicon substrate 1, the silicon substrate 1 is provided with a substrate groove 6, and the cantilever beam structure 5 is suspended above the substrate groove 6 , the silicon nitride waveguide structure 2 and the silicon waveguide structure 3 are arranged in the cantilever beam structure 5, the silicon nitride waveguide structure 2 is located above the silicon waveguide structure 3, and one end of the silicon nitride waveguide structure 2 is arranged at the coupling end face 7, One end of the silicon waveguide structure ...
Embodiment 2
[0069] Those skilled in the art can understand this embodiment as a more specific description of Embodiment 1.
[0070] This embodiment provides a silicon nitride waveguide-assisted cantilever beam end coupler optimized based on a subwavelength grating structure, including a subwavelength grating silicon nitride waveguide structure, a subwavelength grating inverted tapered silicon waveguide structure with graded effective refractive index, and a cantilever beam Structure, cladding structure on silicon oxide.
[0071] Among them, at the coupling end face, the subwavelength grating inverted tapered silicon waveguide structure is covered by a silicon oxide upper cladding layer, the light is coupled near the subwavelength grating silicon nitride waveguide structure, and the subwavelength grating inverted tapered silicon waveguide structure is distributed at a certain distance from the coupling end face. At the distance, with the increase of the effective refractive index of the su...
Embodiment 3
[0076] Those skilled in the art can understand this embodiment as a more specific description of Embodiment 1.
[0077] This embodiment relates to a cantilever beam end-face coupler, which is prepared on an SOI wafer. The SOI wafer includes, from bottom to top, a silicon substrate, a silicon dioxide buried oxide layer, and a top silicon.
[0078] In this embodiment, the thickness of the silicon dioxide buried oxide layer is 3 μm, the thickness of the silicon layer used for preparing the coupler is 220 nm, and the thickness of the cladding layer on the silicon dioxide is 7 μm.
[0079] In this embodiment, a cantilever beam structure is formed by removing part of the silicon substrate, which reduces the leakage of light to the silicon substrate and increases the coupling efficiency. At the coupling end face, a silicon nitride waveguide structure is introduced. The silicon nitride waveguide structure has a small refractive index, which can diffuse light and increase the overlap ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Width | aaaaa | aaaaa |
| Grating period | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


