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A kind of power mosfet device and its making method

A device and power technology, applied in the field of MOSFET devices and their manufacturing, can solve the problem that it is difficult to further improve the withstand voltage of the device terminal area, and achieve the effects of improving processing reliability, improving reliability and avoiding wafer warpage.

Active Publication Date: 2022-07-26
NANJING MICRO ONE ELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whether it is a single epitaxy or multiple epitaxy process, the device terminal area and the active area are in the same epitaxial layer, it is difficult to further improve the withstand voltage of the device terminal area, making the device face reliability problems

Method used

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  • A kind of power mosfet device and its making method
  • A kind of power mosfet device and its making method
  • A kind of power mosfet device and its making method

Examples

Experimental program
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Embodiment 1

[0037] Refer to the attached figure 1 , the present invention discloses a power MOSFET device, the power MOSFET device is divided into an active region 100 and a terminal region 101, including a drain metal 01, and a first conductive type substrate 02 is arranged on the drain metal 01 , a first conductivity type epitaxial layer 03 is provided on the first conductivity type substrate 02, a second conductivity type epitaxial layer 04 is provided on the first conductivity type epitaxial layer 03, and the active region 100 is provided with a second conductivity type epitaxial layer 04. A first conductive type well region 14 is provided in the first conductive type epitaxial layer 03 and the second conductive type epitaxial layer 04 .

[0038] A first-type trench 07 and a second-type trench 10 made of insulating materials such as silicon dioxide are provided in the first-conductivity-type epitaxial layer 03 and the second-conductivity-type epitaxial layer 04. The first-type trench ...

Embodiment 2

[0042] A manufacturing method of a power MOSFET device, comprising the following steps:

[0043] Step 1: Select the material of the first conductive type substrate 02 and epitaxially grow the first conductive type epitaxial layer 03 on the surface thereof;

[0044] Step 2: using a mask window, selectively implanting first-conductivity-type ions into the active region 100 on the surface of the first-conductivity-type epitaxial layer 03 to form a first-conductivity-type well region 14;

[0045] Step 3: epitaxially form a second conductivity type epitaxial layer 04 on the surface of the first conductivity type epitaxial layer 03, and the first conductivity type well region 14 diffuses to the second conductivity type epitaxial layer 04 due to the high temperature during the epitaxy process middle;

[0046] Step 4: selectively etching the first type trench 07 in the active region 100 and the second type trench 10 in the terminal region 101 on the upper surface of the second conduc...

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Abstract

The invention relates to a power MOSFET device and a manufacturing method thereof. The power MOSFET device is divided into an active region and a terminal region, a first conductive type epitaxial layer is provided on a first conductive type substrate, and a first conductive type epitaxial layer is arranged on the first conductive type substrate. A second conductivity type epitaxial layer is arranged on the layer, a first conductivity type well region is arranged in the first conductivity type epitaxial layer and the second conductivity type epitaxial layer in the active region, and a first conductivity type epitaxial layer and a second conductivity type well region are arranged in the first conductivity type epitaxial layer and the second conductivity type. A trench is provided in the type epitaxial layer, a first conductivity type source electrode and a second conductivity type source electrode are provided in the second conductivity type epitaxial layer of the active region, and a second conductivity type epitaxial layer in the terminal region is provided with The source electrode of the second conductivity type can alleviate the warpage of the semiconductor wafer during the manufacturing process, effectively improve the terminal withstand voltage of the power semiconductor device, and improve the reliability of the power semiconductor device.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a MOSFET device and a manufacturing method thereof. Background technique [0002] Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is a voltage-controlled electronic device that generally has three ports: source, gate and drain. For a power MOSFET, since it needs to bear a high voltage when it is turned off, a certain chip area is bound to form the withstand voltage of the depletion layer. In particular, for lateral power MOSFET devices, high-voltage devices inevitably mean a larger chip area, thereby increasing the chip cost. However, such devices have the advantage of being easy to integrate. For vertical power MOSFET devices, the withstand voltage part is transferred from horizontal to vertical, which can greatly reduce the chip area. In addition, the commonly used field plate technology in lateral power devices can greatly improv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/265
CPCH01L29/7811H01L29/7813H01L29/66734H01L29/66484H01L29/7831H01L21/265H01L29/0623
Inventor 朱袁正杨卓黄薛佺朱晨凯
Owner NANJING MICRO ONE ELECTRONICS
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