ZnO nanowire grid HEMT ultraviolet light detector
A technology of ultraviolet detector and nano wire grid, applied in the field of ultraviolet light detection, can solve the problems of low sensitivity and slow response speed
Pending Publication Date: 2022-06-07
BEIJING UNIV OF TECH
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Problems solved by technology
However, photoconductive detectors generally have problems such as low sensitivity and slow response speed. At present, the research is mainly focused on ultraviolet photodetectors with structures such as photovoltaic-based GaN-based MSM, p-i-n / p-n, and Schottky.
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[0011] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.
[0012] The ultraviolet light detector includes: an epitaxial substrate composed of a Si base layer 1, an AlGaN buffer layer 2, a GaN barrier layer 3, an AlGaN barrier layer 4, and a p-GaN cap layer 5, a source electrode 6, a drain electrode 7, a gate The electrode 8 and the ultraviolet photosensitive material ZnO nanowire 9 covered on the gate electrode.
[0013] In the above scheme, the Si base layer is the Si base layer 1;
[0014] In the above scheme, the AlGaN buffer layer is the AlGaN buffer layer 2, and the thickness is 800-850 nm;
[0015] In the above scheme, the GaN barrier layer is the GaN barrier layer 3, and the thickness is 150-300 nm;
[0016] In the above scheme, the AlGaN barrier layer is the AlGaN barrier layer 4, the thi...
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Abstract
The invention discloses a ZnO nanowire grid HEMT ultraviolet light detector, and relates to the technical field of ultraviolet light detection. According to the invention, a traditional high electron mobility transistor (HEMT) and a nanometer structure semiconductor material ZnO are combined to prepare a photoelectric detector sensitive to ultraviolet light. A depletion type AlGaN / GaN epitaxial wafer covered by a p-GaN layer is selected, and meanwhile, overall lower etching is carried out on a source electrode region and a drain electrode region, so that the device is in a turn-off state when no manual external voltage is applied. On a gate electrode of the device, a ZnO nanowire structure growing outwards as much as possible is obtained in a reverse hydrothermal growth mode with the front face facing downwards, the hydrothermal growth time and temperature are controlled and adjusted to obtain nanowires good in growth morphology and uniform in arrangement, and the sensing capacity of the nanowires to ultraviolet light is directly affected by the growth state of the nanowires.
Description
technical field [0001] The invention relates to an ultraviolet light detection technology, including the specific equipment manufacturing process and the technical field of testing. Background technique [0002] Photodetectors made of semiconductor materials can detect light in different wavelength bands. Traditional commercial Si-based UV photodetectors have defects such as high cost and large volume, and are not suitable for complex detection environments. As a typical third-generation semiconductor material, GaN has a high band gap (3.4 eV), high hardness, good chemical stability, and strong corrosion resistance, and can be used under high temperature and high power conditions. At present, the peak response wavelength of the domestic company's ultraviolet light detection equipment is concentrated in 200-365nm, and the peak response is concentrated in 0.05-0.2A / W. However, photoconductive detectors generally have problems such as low sensitivity and slow response speed. A...
Claims
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IPC IPC(8): H01L31/112H01L31/0224H01L31/0304H01L31/18
CPCH01L31/112H01L31/1848H01L31/03048H01L31/022483H01L31/022491Y02P70/50
Inventor 朱彦旭谭张杨李建伟李晋恒宋潇萌
Owner BEIJING UNIV OF TECH