Single crystal pulling method and single crystal pulling device

Abstract

Provided are a single crystal pulling method and a single crystal pulling device with which, when pulling a silicon single crystal from a silicon melt by the Czochralski method, a single crystal having a low resistivity can be obtained by efficiently adding a dopant to the silicon melt without causing dislocation after shoulder formation and during the first half formation of a product part. The method is provided with: a step for forming an inert gas flow (G) that flows from above toward a silicon melt surface (M1) on the inside of a heat shield (7) disposed so as to surround a silicon single crystal (C) grown in the furnace, expands radially along the silicon melt surface, and is discharged to the outside of the crucible; a step in which the dopant is brought into a gaseous state in the furnace; a step for discharging the dopant, which has been turned into a gaseous state, to the inside of the heat-insulating plate; and a step in which the dopant that has been turned into a gaseous state is caused to flow in conjunction with the inert gas flow.

Description

technical field [0001] The present invention relates to a single crystal pulling method and a single crystal pulling device. The single crystal pulling method is to pull a silicon single crystal by a Czochralski method (Czochralski method: CZ method). For example, it relates to a single crystal pulling method and a single crystal pulling method. In order to form an N-type semiconductor, red phosphorus, arsenic, etc. are doped with a high concentration in this single crystal pulling method, so that a single crystal with low resistivity can be obtained. Background technique [0002] The growth (growth) of the silicon single crystal based on the CZ method is performed as follows: Figure 7 The quartz crucible 51 in the shown chamber 50 is filled with polycrystalline silicon as a raw material, and the polycrystalline silicon is heated and melted by a heater 52 provided around the quartz crucible 51 to prepare a silicon melt M, which is then installed in the silicon melt M. The s...

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Problems solved by technology

[0010] However, when the solid dopant is injected into the silicon melt M after the formation of the shoulder C1, the solid dopant comes into contact with the crystal, and there is a problem that the crystal line disappears.

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