Doped high-rate 5-series single crystal precursor and preparation method thereof

A high-magnification, precursor technology, applied in chemical instruments and methods, ruthenium/rhodium/palladium/osmium/iridium/platinum compounds, inorganic chemistry, etc., can solve the problem that metal elements cannot co-precipitate with main metal elements and cannot form precipitates etc. to achieve good sphericity, enhanced layered structure stability, and stable rate performance

Active Publication Date: 2022-07-01
宜宾光原锂电材料有限公司 +1
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, not all doping can be carried out in the precursor preparation stage. Some metal elements cannot effectively co-precipitate with the main metal elements or cannot form...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doped high-rate 5-series single crystal precursor and preparation method thereof
  • Doped high-rate 5-series single crystal precursor and preparation method thereof
  • Doped high-rate 5-series single crystal precursor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Using pure water, the ternary salt is made into a ternary salt solution with a concentration of 2mol / L and a Ni:Co:Mn molar ratio of 5:2:3. The Ni, Co, and Mn salts used in the ternary salt solution are NiSO 4 ·6H 2 O, CoSO 4 ·7H 2 O, MnSO 4 ·H 2 O, the main metal concentration of the ternary salt solution is 100 ~ 130g / L; slowly pass 9L of SO 2 To 50L pure water, 50L containing SO 2 After the pure aqueous solution was equally divided, the IrCl 4 ·xH 2 O, ZrOCl 2 ·8H 2 O salt was added three times to two 25L SO containing 2 In the pure aqueous solution of , the element content was detected after each addition, and the first companion feed solution with an Ir salt concentration of 0.6 g / L and a second companion feed solution with a Zr salt concentration of 3 g / L were prepared.

[0048] The NaOH precipitant was prepared into an alkaline solution with a concentration of 10 mol / L with pure water, and then the ammonia water was diluted to a solution of 9....

Embodiment 2

[0061] Further, according to the molar ratio of Ir:Zr=1:5, and according to the proportion of the mass of Ir to the total mass of the precursor of 0.01%, 0.03%, and 0.06%, the precursor was prepared according to the method in Example 1, respectively.

[0062] The three slurries E (Ir0.01%, Zr0.024%), F (Ir0.03%, Zr0.072%), G (Ir0.06%, Zr0.144%) produced by the reaction were put into the The kettle was aged for 4h, then pumped to a centrifuge and dried to be a filter cake, and the filter cake was centrifugally washed with 1 mol / L alkali solution of 8 times the weight, and then centrifugally washed with 6 times the weight of pure water for several times. After the content reaches the standard, it is sent to an oven at 130 ° C for drying; after the moisture is qualified, it is sieved with a 300-mesh sieve tray, and finally demagnetized with a 12000GS iron remover to obtain E, F, G three precursors, the product The shapes are as Figure 5 , Image 6 , Figure 8 . It can be s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Areal densityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a doped high-rate 5-series single crystal precursor and a preparation method thereof, the molecular general formula of the precursor is LiNi0.5 (1-x-y) Co0.2 (1-x-y) Mn0.3 (1-x-y) IrxZry (OH) 2, 3.5 * 10 <-4 > < = x + y < = 3.0 * 10 <-3 >, 4.8 * 10 <-5 > < x < 3.9 * 10 <-4 >, and 3 * 10 <-4 > < y < 3 * 10 <-3 >, the doped high-rate 5-series single crystal precursor is prepared by sequentially preparing a ternary salt solution, a first accompanying liquid and a second accompanying liquid, preparing liquid caustic soda and ammonia water, and preparing a reaction kettle base solution. Carrying out coprecipitation reaction on the main metal ions and the doped element ions, filtering to form a filter cake after the particles reach the target particle size, and washing, drying, screening and demagnetizing the filter cake to obtain the precursor. The precursor prepared by the method is high in layered structure stability and has good sphericity, porosity, primary particle crystal morphology and high rate performance, and the preparation method is beneficial to precision control of the content of final doped elements.

Description

technical field [0001] The invention relates to a doped high-rate 5-series single crystal precursor, in particular to a high-rate 5-series single crystal precursor doped with Ir and Zr at the same time and a preparation method thereof. Background technique [0002] The molar ratio of nickel in the metal composition of the 5-series single crystal precursor is about 0.5, the capacity is guaranteed, and the compaction density is also high. In addition, due to its single crystal structure, the prepared cathode material can maintain equiaxed changes in the expansion and contraction of the crystal during charging and discharging, so it has high stability of the layered structure, thus prolonging the cycle life, charging and discharging cut-off voltage and high temperature cycle. Performance is also improved. Therefore, the preparation of cathode materials from 5-series single crystal precursors is an excellent research method. [0003] However, due to the cation mixing effect be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G55/00
CPCC01G55/002C01P2004/61C01P2004/62C01P2004/50C01P2006/40C01P2004/32C01P2004/30C01P2004/01C01P2006/80Y02E60/10
Inventor 张燕辉邢王燕杜先锋朱婷婷王政强孙宏宋方亨
Owner 宜宾光原锂电材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap