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Method for processing semiconductor laser

A technology of lasers and semiconductors, applied in semiconductor lasers, lasers, semiconductor/solid-state device manufacturing, etc., can solve problems such as high process cost, complex implementation process, and damaged device performance, and achieve optimized dynamic performance, low cost, and improved modulation The effect of bandwidth

Pending Publication Date: 2022-07-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, there are still problems such as the specific implementation process is relatively complicated, the process cost is high, and other performances of the device are easily damaged.

Method used

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  • Method for processing semiconductor laser
  • Method for processing semiconductor laser
  • Method for processing semiconductor laser

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Embodiment Construction

[0027] The inventors of the present application have conducted long-term research on the problem of limited high-speed modulation characteristics of semiconductor lasers. Taking Vertical Cavity Surface Emitting Laser (VCSEL) as an example, in view of the limited high-speed modulation characteristics of VCSEL, most of the current consideration is to optimize the device structure of VCSEL, such as the use of Distributed Bragg Reflector (Distributed Bragg Reflector) , DBR) interface gradient to reduce photon lifetime. The diameter of the lower mesa is increased, the thermal diffusion effect of the lower mesa is improved, the self-heating effect is alleviated, and the modulation bandwidth is improved. Or according to the injection current of the device, the size of the oxidized aperture can be optimized to achieve a higher modulation bandwidth.

[0028] However, the inventor found through research that to improve the modulation bandwidth by optimizing the structural parameters of...

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Abstract

The invention discloses a method for processing a semiconductor laser, and the method comprises the steps: carrying out the irradiation processing of the semiconductor laser through a preset irradiation source in the preparation process of the semiconductor laser, so as to improve the modulation bandwidth of the semiconductor laser, and the irradiation source is a particle irradiation source. In the preparation process of the semiconductor laser, the semiconductor laser is irradiated by using the preset irradiation source, so that the modulation bandwidth of the semiconductor laser is improved by a simpler and low-cost method under the condition that other performances of the semiconductor laser are not influenced, and the dynamic performance of the semiconductor laser is favorably optimized.

Description

technical field [0001] The present invention relates to the technical field of semiconductor lasers, and in particular, to a method for processing semiconductor lasers. Background technique [0002] A semiconductor laser is a laser with a semiconductor material as the working substance. Its working principle is that through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor substance, or between the energy band of the semiconductor substance and the impurities (acceptor or valence band) Between the donor energy levels, the population inversion of non-equilibrium carriers is realized, and when a large number of electrons in the state of population inversion recombine with holes, stimulated emission occurs. [0003] As an important dynamic operating parameter of semiconductor lasers, modulation bandwidth directly affects the data transmission capability of the device. In practical applications, the high-speed modulatio...

Claims

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Application Information

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IPC IPC(8): H01L21/268H01S5/00
CPCH01L21/268H01S5/00H01S2304/00
Inventor 单小婷赵发展孙昀王磊李博高见头罗家俊滕瑞
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI