Off-axis semiconductor laser
A technology of semiconductors and lasers, applied in the field of off-axis semiconductor lasers, can solve problems such as inability to realize off-axis work, and achieve the effects of realizing off-axis work, increasing cavity length, and optimizing beam transmission
Pending Publication Date: 2022-07-08
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology
Currently reported optically pumped vertical external cavity lasers have a maximum cavity length of only about 50 cm, and cannot work off-axis
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[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0024] like figure 1 As shown in the figure, it is a schematic structural diagram of an off-axis semiconductor laser provided by an embodiment of the present invention. It can be seen from the figure that the off-axis semiconductor laser includes a cooling water cooling base 101 and a water cooling radiator (not shown in the figure) , copper heat sink 102, gain chip 103, pump system 107, reflection end assembly 104, output end assembly 106, lens assembly 105 and external cavity; the external cavity (not shown in the figure) consists of reflection end assembly 104, gain The chip 1...
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Abstract
The invention relates to the technical field of semiconductor lasers, in particular to an off-axis semiconductor laser which comprises a heat dissipation water cooling base, a water cooling radiator, a copper heat sink, a gain chip, a pumping system, a reflection end assembly, an output end assembly, a lens assembly and an outer cavity. The outer cavity is formed by a reflection end assembly, a gain chip and an output end assembly; the pumping system pumps the gain chip to generate gain, and a light beam after gain generation is reflected by the reflection assembly, converged to the gain chip, reflected by a distributed Bragg reflector in the gain chip, converged by the lens assembly and arrived at the output end assembly to realize intracavity oscillation; according to the off-axis semiconductor laser, the light beam transmission mode is optimized through the design of the lens assembly in the outer cavity, meanwhile, the cavity length of the outer cavity of the semiconductor laser can be increased by adopting the design of the output end assembly of the retro-reflector structure, and off-axis work is achieved.
Description
technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an off-axis semiconductor laser. Background technique [0002] Semiconductor lasers have the advantages of high photoelectric conversion efficiency, small size, light weight and low cost, and have become a research hotspot in the field of optoelectronic technology. The external cavity oscillation characteristics of optically pumped vertical cavity surface emitting semiconductor lasers can be converted into output wavelengths by inserting nonlinear optical crystals in the external cavity, which greatly expands the wavelength coverage of semiconductor lasers. Through frequency doubling to output visible light band, it has a very wide range of applications in laser medical treatment, gene sequencing, atmospheric remote sensing, etc. [0003] With the popularization of smart devices, carrying chargers to charge mobile devices has caused great inconvenience. Wireless ch...
Claims
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IPC IPC(8): H01S5/024H01S5/02253H01S5/125
CPCH01S5/02423H01S5/125H01S5/02253
Inventor 张建伟张卓周寅利宁永强
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI