Electromagnetic composite mechanical filtering ion implantation method

Abstract

The invention provides an electromagnetic composite mechanical filtering ion implantation method, and belongs to the technical field of ion implantation, a cathode arc source assembly can generate metal ions and some particles, the motion trail of the metal ions shifts under the action of a magnetic field formed by an electromagnetic coil group, and the particles are separated from the metal ions. Then the ion extraction assembly drags the particles to pass through an ion outlet, and uncharged particles move forwards in the speed direction of the uncharged particles and are deposited on the baffle assembly, so that the ionization efficiency is improved; meanwhile, a positive ion beam is formed by the ion extraction assembly, required ions are further screened out through the mass analysis device, the ions are accelerated by the accelerating tube and are guided into the focusing system to be gathered into an ion beam with the diameter of several millimeters, and then ion implantation is carried out on a workpiece stored in the working target chamber through the deflection scanning system; in addition, the ion sputtering shell with the straight square cavity is large in size and short in path, and the deposition rate can be greatly increased.

Description

technical field [0001] The invention relates to the technical field of ion implantation, in particular to an ion implantation method for electromagnetic compound mechanical filtering. Background technique [0002] Ion implantation equipment is one of the high-voltage small accelerators with the largest number of applications. It obtains the required ions from the ion source, and obtains the ion beam current of hundreds of kiloelectron volts through acceleration. It is used for ion implantation of semiconductor materials, large-scale integrated circuits and devices, and is also used for surface modification and fabrication of metal materials. film etc. [0003] The metal ions generated by the metal ion source in the existing ion implantation equipment are often accompanied by some impurity particles. At the same time, there are still air atoms and incompletely ionized impurity particles that have not been excluded during the operation of the equipment. When the ions move at ...

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Problems solved by technology

[0003] The metal ions produced by the metal ion source in the existing ion implantation equipment are often accompanied by some impurity particles. At the same time, there are unexcluded air atoms and incompletely ionized impurity particles during the operation of the equipment. When the ions move at high speed in the pipeline, they are It may collide with air atoms or impurity particles, resulting in charge exchange. The ions transfer charges to air atoms or impurity particles, and are electrically neutral. Neutral ions have no effect on doping, so neutral ions need to be avoided The production of metal ions needs to increase the ionization rate of the metal ion source

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