Plasma source and semiconductor reaction equipment
A plasma source and coil technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of reduced magnetic induction intensity, uneven distribution of plasma density, etc.
Pending Publication Date: 2022-07-22
盛吉盛半导体科技(北京)有限公司 +1
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] For the spiral (Solenoid Antenna) plasma source of the prior art, the coil rotates and expands in an equidistant manner, that is, the distance between adjacent coil curves is equal, although this coil can better control the adjacent coil curves Keep the same distance between them to generate a locally uniform superimposed induced magnetic field, but when considering the superimposed induced magnetic field of all helical coils, this type of coil is within about 1 / 2 of the radius of the plasma source, due to the same direction current The number of coil curves per unit area is relatively large, and outside the radius of the plasma source about 1 / 2, the number of coil curves fed with the same direction current will be less per unit area. Therefore, in the plasma source The magnetic induction intensity B generated at about 1 / 2 of the radius reaches its peak value, thus causing the plasma density to reach its peak value
In addition, the currents in the coil curves of the coils in the central region of the plasma source that rotates and expands in an equidistant manner are different, and correspondingly, the magnetic induction intensity in the central region will be greatly reduced, resulting in plasma in the central region uneven distribution of density
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] In order to further illustrate the technical means of the present invention, the specific embodiments of the plasma source and the semiconductor reaction equipment proposed by the present invention are described in detail below with reference to the accompanying drawings and preferred embodiments.
[0025] like figure 1 shown, figure 1 A schematic cross-sectional view of a plasma chamber including a conventional plasma source is shown. The plasma chamber 100 includes a reaction space 104, and the reaction space 104 is composed of a chamber outer wall 102 and a chamber skylight 112, wherein the chamber skylight 112 is made of quartz material. A stage 106 for placing the silicon wafer 118 is provided inside the reaction space 104 . Although not shown in the figures, stage 106 may have heaters disposed therein. The plasma source 200 is disposed on the outer surface of the chamber skylight 112 . The external RF power source 114 is connected to the plasma source 200 thro...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention relates to a plasma source and a semiconductor reaction apparatus, the plasma source comprising a central liner and a plurality of coils helically extending from the central liner to surround the central liner, the pitch between adjacent coil curves on the plurality of coils being set to gradually increase from the central liner to the outside. According to the invention, uniform magnetic field intensity can be generated.
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a plasma source and semiconductor reaction equipment. Background technique [0002] The RF coil of an inductively coupled plasma (ICP) source is placed on the quartz skylight to transmit the coupled electromagnetic energy to the plasma. When a certain radio frequency current is connected to the coil, an induced magnetic field B(r, z, t) is generated in the adjacent area inside the plasma through the quartz skylight of the chamber, according to Faraday's law The magnetic field B is induced in the reaction chamber to generate an induced radio frequency electric field E(r, z, t), and the electrons in the plasma will continue to accelerate in this induced radio frequency electric field, and collide with neutral gas molecules to be ionized, This couples the RF energy in the coil into the ionized gas and maintains the plasma discharge process. Therefore, ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/08H01J37/32
CPCH01J37/08H01J37/321H01J37/3211
Inventor 项习飞余先炜田才忠林保璋
Owner 盛吉盛半导体科技(北京)有限公司