Preparation method of solar cell, solar cell and photovoltaic module
A solar cell and laser processing technology, which is applied in the field of solar cells, can solve the problems of complex overall process of solar cells and high difficulty in the operation of doped polysilicon layers, and achieve the effect of easy mass production and simplified preparation process
Active Publication Date: 2022-07-22
ZHEJIANG JINKO SOLAR CO LTD
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Problems solved by technology
[0003] However, it is difficult to prepare the doped polysilicon layer with the current process, which makes the overall process of preparing solar cells more complicated.
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Embodiment Construction
[0037] It can be known from the background art that there is a problem that the fabrication process of solar cells is complicated at present.
[0038] The analysis found that one of the reasons for the complexity of the preparation process of solar cells is that at present, when forming the passivation contact layer, multiple layers of doped polysilicon layers with different degrees of crystallization are usually formed, so as to realize the different doped polysilicon layers. The properties are controlled, so that the doped polysilicon layers with different degrees of crystallization play different roles, and synergistically improve the photoelectric conversion performance of the solar cell. In the process of forming multi-layer doped polysilicon with different degrees of crystallization, it is necessary to form a first doped amorphous silicon layer first, and then crystallize the first doped amorphous silicon layer to form a first doped amorphous silicon layer. doped polysil...
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Abstract
The embodiment of the invention relates to the technical field of solar cells, in particular to a preparation method of a solar cell, the solar cell and a photovoltaic module, and the preparation method of the solar cell comprises the steps: providing a substrate; forming a doped amorphous silicon layer on one side of the first surface of the substrate; n times of laser processing are carried out on the doped amorphous silicon layer to form N doped polycrystalline silicon layers in the direction away from the first surface of the substrate, N is larger than 1, the power, wavelength and pulse irradiation number of the nth time of laser processing are all smaller than the power, wavelength and pulse irradiation number of the (n-1) th time of laser processing, and in the formed N doped polycrystalline silicon layers, N is larger than 1. The grain size in the nth doped polycrystalline silicon layer is larger than the grain size in the (n-1) th doped polycrystalline silicon layer, n is smaller than or equal to N, and the first doped polycrystalline silicon layer is arranged towards the substrate. The embodiment of the invention is beneficial to simplifying the process for forming the solar cell.
Description
technical field [0001] The embodiments of the present application relate to the field of solar cells, and in particular, to a method for preparing a solar cell, a solar cell, and a photovoltaic assembly. Background technique [0002] In order to improve the photoelectric conversion performance of the solar cell, a passivation contact layer is usually prepared on the back of the solar cell, and the solar cell is passivated by the passivation contact layer, thereby reducing the recombination in the solar cell substrate and on the substrate surface. The current passivation contact layer usually includes a doped polysilicon layer, and the doped polysilicon layer is doped with conductive ions to form an energy band bend on the surface of the substrate, thereby playing a field passivation effect on minority carriers. [0003] However, the operation of preparing the doped polysilicon layer by the current process is relatively difficult, resulting in a complicated overall process fo...
Claims
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IPC IPC(8): H01L31/18H01L21/268H01L31/0368H01L31/048H01L31/068
CPCH01L31/182H01L31/03682H01L31/068H01L31/048H01L21/268H01L21/02532H01L21/02595H01L21/02686H01L31/1804H01L31/1872H01L21/0245H01L21/02488H01L21/0243H01L21/02381Y02P70/50H01L31/02363H01L31/1868
Inventor 金井升张彼克张昕宇
Owner ZHEJIANG JINKO SOLAR CO LTD