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Polishing method for indium antimonide single crystal wafer

An indium antimonide single crystal and wafer technology is applied in the polishing field of indium antimonide single wafers, which can solve problems such as poor polishing effect, and achieve the effects of accelerating the formation speed, improving the polishing efficiency and preventing decomposition.

Pending Publication Date: 2022-07-29
厦门华芯晶圆半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the current process only has two polishings, and the polishing effect is not good

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A polishing method for an indium antimonide single wafer, comprising the following steps:

[0018] S1, rough polishing: use polishing cloth PV2700, set the polishing pressure to 220g / cm 2 , the rotating speed is 50r / min, the flow rate of polishing liquid A is 200mL / min, and the indium antimonide single wafer is roughly polished on the polishing machine. After the end, the wafer is ultrasonically cleaned and dried to make the surface of the wafer dry and clean;

[0019] S2, medium polishing: use polishing cloth Suba400, set the polishing pressure to 150g / cm 2 , the rotating speed is 36r / min, the flow rate of polishing liquid B is 300mL / min, the indium antimonide single wafer is polished on the polishing machine, and after the end, the wafer is ultrasonically cleaned and dried again, so that the surface of the wafer is dry and clean;

[0020] S3, fine polishing: use polishing cloth CP, set the polishing pressure to 100g / cm 2 , the rotation speed is 30r / min, the flow rat...

Embodiment 2

[0022] A polishing method for an indium antimonide single wafer, comprising the following steps:

[0023] S1, rough polishing: use polishing cloth PV2700, set the polishing pressure to 220g / cm 2 , the rotating speed is 50r / min, the flow rate of polishing liquid A is 200mL / min, and the indium antimonide single wafer is roughly polished on the polishing machine. After the end, the wafer is ultrasonically cleaned and dried to make the surface of the wafer dry and clean;

[0024] S2, medium polishing: use polishing cloth Suba400, set the polishing pressure to 150g / cm 2 , the rotating speed is 36r / min, the flow rate of polishing liquid B is 300mL / min, the indium antimonide single wafer is polished on the polishing machine, and after the end, the wafer is ultrasonically cleaned and dried again, so that the surface of the wafer is dry and clean;

[0025] S3, fine polishing: use polishing cloth CP, set the polishing pressure to 100g / cm 2 , the rotation speed is 30r / min, the flow rat...

Embodiment 3

[0027] A polishing method for an indium antimonide single wafer, comprising the following steps:

[0028] S1, rough polishing: use polishing cloth PV2700, set the polishing pressure to 220g / cm 2 , the rotating speed is 50r / min, the flow rate of polishing liquid A is 200mL / min, and the indium antimonide single wafer is roughly polished on the polishing machine. After the end, the wafer is ultrasonically cleaned and dried to make the surface of the wafer dry and clean;

[0029] S2, medium polishing: use polishing cloth Suba400, set the polishing pressure to 150g / cm 2 , the rotating speed is 36r / min, the flow rate of polishing liquid B is 300mL / min, the indium antimonide single wafer is polished on the polishing machine, and after the end, the wafer is ultrasonically cleaned and dried again, so that the surface of the wafer is dry and clean;

[0030] S3, fine polishing: use polishing cloth CP, set the polishing pressure to 100g / cm 2 , the rotating speed is 30r / min, the flow rat...

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PUM

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Abstract

The invention relates to the technical field of indium antimonide wafer surface treatment, in particular to a polishing method for an indium antimonide single crystal wafer, which comprises the following steps of: S1, roughly polishing the indium antimonide single crystal wafer on a polishing machine by adopting polishing cloth PV2700 and setting polishing pressure, rotating speed and flow of a polishing solution A; s2, polishing cloth Suba400 is adopted, the polishing pressure, the rotating speed and the flow of the polishing solution B are set, and the indium antimonide single crystal wafer is subjected to intermediate polishing on a polishing machine; and S3, polishing cloth CP is adopted, the polishing pressure, the rotating speed and the flow of the polishing solution C are set, meanwhile, a stabilizer is added, and the indium antimonide single crystal wafer is subjected to intermediate polishing on a polishing machine. Compared with the prior art, the polishing efficiency can be effectively improved on the basis that the thickness and the surface roughness of the indium antimonide wafer are controlled.

Description

technical field [0001] The invention relates to the technical field of surface treatment of indium antimonide wafers, in particular to a polishing method for indium antimonide single wafers. Background technique [0002] Among the III-V semiconductors, indium antimonide has the narrowest forbidden band width, the highest electron mobility, the smallest electron effective mass and the largest electron magnetic moment, making it a qualified infrared detection material, and it can be used at high speed and low Power field effect transistors and ultra-high-speed low-power digital logic circuits have great application potential. [0003] Before application, the indium antimonide single crystal needs to be cut to form a single crystal, and then the traces left by the single crystal cutting are removed by grinding, and finally the surface is globally flattened by polishing to meet the requirements of use. However, the current process is only polished twice, and the polishing effec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B29/02B24B51/00C09G1/02
CPCB24B1/00B24B29/02B24B51/00C09G1/02
Inventor 王永净陈基生
Owner 厦门华芯晶圆半导体有限公司
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