Anti-radiation high-voltage device structure
A high-voltage device and anti-radiation technology, which is applied in the direction of semiconductor devices, electrical solid devices, semiconductor/solid device components, etc., can solve the problems of on-resistance degradation and other problems, so as to inhibit the degradation of device on-resistance and improve the total anti-dose The effect of radiation ability
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[0023] like image 3 As shown, this embodiment provides a radiation-resistant high-voltage LDMOS device structure, including a first conductive type substrate 7, a buried oxide layer 13 formed on the first conductive type substrate 7, and a buried oxide layer 13 formed on the buried oxide layer 13. The first conductivity type highly doped Pbury+ layer 17 and the first conductivity type generally doped Pbury layer 16, the first conductivity type generally doped Pbury layer 16 is formed on the second conductivity type drift region 4; the first conductivity type well region 3 The first conductive type body region 1 is located in the upper left corner of the second conductive type drift region 4, the first conductive type body region 1 is located in the first conductive type well region 3, and the second conductive type source region 2 is located in the first conductive type well region 3. The right side of the body region 1; the source electrode 8 is placed above the first conduc...
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