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Indium-iron bump microcrystalline material and preparation method of indium-iron bump microcrystalline piezoelectric disc

A microcrystalline material, piezoelectric disk technology, used in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric effect/electrostrictive or magnetostrictive devices Motor and other directions, to achieve the effect of convenient use, excellent heat dissipation performance and suitable application cost

Pending Publication Date: 2022-08-05
林铭
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Literature search and patent search results: At present, there is no domestic proposal to set many bump microcrystals on the surface of the nano-generating piezoelectric plate, the height of each bump crystallite is not greater than 100nm, and the top of the diameter is not greater than 100nm is spherical or nearly spherical. Relevant literature reports on the composite material layer and preparation method

Method used

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  • Indium-iron bump microcrystalline material and preparation method of indium-iron bump microcrystalline piezoelectric disc
  • Indium-iron bump microcrystalline material and preparation method of indium-iron bump microcrystalline piezoelectric disc
  • Indium-iron bump microcrystalline material and preparation method of indium-iron bump microcrystalline piezoelectric disc

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Effect test

Embodiment 1

[0018] figure 1 For the structural schematic diagram of the ingredients of the iron bump material for the embodiment 1 of the invention 1, figure 2 It is a scanned electron microscopic photo of 100,000 times the microcrystalline material of the iron bump material of the invention 1; in the picture, 1 is the substrate material, and 2 is the composite material layer.

[0019] In the surface of industrial pure iron or steel or iron containing more than 40%(WT%) alloy materials with a thickness of less than 4mm, set a 铟 铟 铟 铟 在 在 在 (WT%) and the iron containing more than 10%(WT%) and the iltate and iron containing and iron and iron A composite material layer with a total of more than 70%(WT%) has many convex dot microcrystalline on the surface of the composite material layer. Each convex point microcrystalline height is not more than 100nm and the top of the diameter is not more than 100nm. Or the high crystal height of the convex point microcrystalline is not greater than 100nm, the...

Embodiment 2

[0021] image 3 For the structural diagram of the illegitimate iron convex voltage voltage disk of the embodiment of the present invention 2, figure 2 For the ingules of the iron bumps of the iron -boned microcrystalline electrical disk sample of the invention embodiment 2, the scanned electron microscopy photo of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample of the sample is magnified. In the picture, 1 is a substrate material and 2 is the composite material layer.

[0022]There are a composite material layer of more than 50%(WT%) and iron containing more than 10%(WT%) and more than 70%(WT%) on the surface of the electrical disk parts, which contains more than 10%(WT%), and a total of more than 70%(WT%). There are many convex dot micro -crystals. Each convex point microcrystalline...

Embodiment 3

[0024] image 3 For the structural diagram of the illegitimate iron convex voltage voltage disk of the embodiment of the present invention 3. In the drawing, 1 is the substrate material, and 2 is the composite material layer.

[0025] Using industrial pure iron or steel or iron containing more than 40%(WT%) alloy materials with a thickness of less than 4mm, it is made of voltage disk parts through mechanical processing methods; a 铟 铟 铟 铟 (WT%%(WT%(WT%(WT%(WT%(WT%(WT%) is set on the surface of the electrical disk parts. ) The composite material layer of more than 10%(WT%) and a total of more than 70%(WT%) containing iron containing iron contains more than 70%(WT%). There are many convex dot micro -crystals on the surface of the composite material layer. The top of the top with no more than 100nm and not greater than 100nm is spherical or approximate spherical, or the top of a convex dot micro -crystal height is not greater than 100nm. Crystal -include more than 50%(WT%) and more th...

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Abstract

The invention discloses an indium-iron salient point microcrystalline material and an indium-iron salient point microcrystalline piezoelectric disc preparation method, and the indium-iron salient point microcrystalline material and the indium-iron salient point microcrystalline piezoelectric disc preparation method comprises the following steps of: preparing an indium-iron salient point microcrystalline piezoelectric disc on the surface of industrial pure iron or steel or an alloy material with the iron content of more than 40% (Wt%) with the thickness of less than 4mm; a composite material layer containing more than 50% (Wt%) of indium, more than 10% (Wt%) of iron and more than 70% (Wt%) of indium and iron is arranged on the surface of the composite material layer, a plurality of salient point microcrystals are arranged on the surface of the composite material layer, the height of each salient point microcrystal is not larger than 100 nm, the top of each salient point microcrystal with the diameter not larger than 100 nm is spherical or approximately spherical, and the diameter of each salient point microcrystal is not larger than 100 nm. Or the height of the salient point microcrystals is not larger than 100 nm, the top of the ellipse with the maximum length not larger than 200 nm is spherical or approximately spherical or approximately elliptical, the content of indium in the salient point microcrystals exceeds 50% (Wt%), the content of indium and iron in the salient point microcrystals exceeds 70% (Wt%), and the salient point microcrystals and the composite material layer are integrated. And the composite material layer on the surface of the part and the base material are integrated to form the indium-iron bump microcrystalline material.

Description

Technical field [0001] The present invention involves a method of molecular bump material and the preparation method of the microcrystalline pressure electrode of the iron bump. Background technique [0002] The nano -power generation system can be divided into four categories according to the principle of vibration energy collectors: electromagnetic, voltage, electrostatic, and friction of nano -power generation. The nano -power generation system generally includes: vibration energy collectors, energy collection circuits and energy storage, etc. Vibration energy collector is the primary link of the entire vibration energy collection process. Especially the design of the front -end structure is the soul of the entire system. [0003] The nano -power electrocable electrode is an important part of the vibration energy collector. It requires good thermal conductivity, extremely low line expansion coefficient, self -lubricating performance, and reduced vibration between parts of the ...

Claims

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Application Information

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IPC IPC(8): H01L41/047H01L41/113H01L41/29H02N2/18
CPCH02N2/18H02N2/186H10N30/877H10N30/30H10N30/06
Inventor 林铭林逸彬李柏森潘威黄俊铭
Owner 林铭