Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composition for reflection reducing coating

An anti-reflection coating and composition technology, applied in coatings, instruments, opto-mechanical equipment, etc., can solve the problems of post-exposure delay, insufficient anti-reflection effect, etc.

Inactive Publication Date: 2004-10-06
MERCK PERFORMANCE MATERIALS GK +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, there is a problem that if the resist is left for a long time after exposure to post-exposure bake (PEB), the pattern profile after development becomes T-shaped (T-shaped) in the case of a positive resist. top), or a change in the size of the resist pattern as a function of time during resist placement can cause post-exposure delay (PED)
The problem with this coating composition is that the PED problem has not yet been solved. The reason is that the high refractive index of the composition makes the anti-reflection effect insufficient, and the weak acid salt of ammonium listed as the proton generating substance makes the chemical The acid generated by the enhanced resist is deactivated and present on the surface of the resist
However, the disadvantage of these compositions is that stripe-like coating defects can appear on progressive substrates such as logic (logic) ICs, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for reflection reducing coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] By heating at 70°C, 1.0 parts of poly(vinylpyrrolidone) with a weight average molecular weight of 3,000, 4.0 parts of C 8 f 17 SO 3 H, 0.35 parts of monoethanolamine and 0.1 parts of C 6 f 13 SO 2 NH 2 Uniformly dissolved in 94.55 parts of pure water. The solution was cooled to room temperature (23° C.), and the solution was confirmed to be homogeneous. Then, the obtained solution was passed through a 0.05 μm filter to prepare an antireflection coating composition. The pH of this antireflective coating composition was 1.63 at 23°C. Table 1 shows the dynamic and static surface tensions of the formed antireflective coating compositions and the contact angles (degrees) when the compositions were dropped on the resist surface.

[0066] Static surface tension, dynamic surface tension, and contact angle (degrees) were determined by the following measurement methods.

[0067] Static Surface Tension:

[0068] By the Wilhelmy method, it was measured at 23° C. using a ...

Embodiment 2～15

[0074] Example 1 was repeated using the compounds in the amounts (parts) shown in Tables 1 and 2 to obtain antireflective coating compositions in Examples 2-15. The pH values ​​of the formed antireflective coating compositions are shown in Table 1 and Table 2.

[0075] The static surface tension, dynamic surface tension and contact angle of the antireflective coating composition in each example were measured in the same manner as in Example 1. The results are shown in Table 1 and Table 2.

[0076] Example

[0077] Example

Embodiment 16

[0083] The coating properties, coating stability, refractive index and lithographic characteristics of the antireflective coating compositions obtained in Examples 1 to 15 were evaluated according to the following evaluation methods. The results are shown in Table 4 and Table 5. The refractive index in the table is the value at 248 nm.

[0084] Evaluate coating performance:

[0085] Chemically amplified positive resist [AZ  DX1100 (Clariant (Japan) K.K.)] is coated on an 8-inch HMDS-treated silicon wafer with a thickness of 0.75 μm after baking, and is baked on a heating plate at 110 ° C for 60 seconds to obtain Substrate for evaluation. Then, the anti-reflective coating composition sample is dropped and coated on the above-mentioned substrate by a resist coating machine LARC-ULTIMA 1000 (Lithoteck Ltd.), and the minimum amount of the dropped composition must be within 8 inches of silicon A uniform coating was formed on the sheet, and a comparative evaluation was perfor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A composition for a reflection reducing coating which comprises (A) a perfluoroalkylsulfonic acid represented by the general formula: CnF2n+1SO3H, wherein n denotes an integer of 4 to 8, (B) an organic amine, (C) a water-soluble polymer, (D) a perfluoroalkylsulfonamide represented by the general formula: CnF2n+1SO2NH2, wherein n denotes an integer of 1 to 8, and (E) water, and has a pH of 1.3 to 3.3. A resist pattern is obtained by coating the composition on a photoresist film formed on a substrate to form a reflection reducing coating, and then subjecting it to exposure and development. This composition for a reflection reducing coating can be coated uniformly on a photoresist film irrespective of the type of resist and the shape of the surface of a substrate, and can be used for providing a resist pattern which is free from the occurrence of standing wave effect, multireflection effect, and a T-shape pattern form and a dimensional change caused through the elapse of time after exposure.

Description

field of invention [0001] The present invention relates to an antireflective coating composition, and more particularly, to an antireflective coating composition for preventing a decrease in pattern dimensional accuracy (pattern dimensional width) due to reduction in accuracy between photolithography and After forming a pattern on the photoresist film, the incident light and the reflected light of the photoresist in the photoresist film interfere with the reflected light of the substrate surface and cause; Antireflective composition to form a pattern method. Background of the invention [0002] In the production process of semiconductor elements, a lithography technique is widely used, which is to form a photoresist film on a substrate such as a silicon wafer, then selectively expose it to actinic radiation, and then develop A resist pattern is formed on the substrate. [0003] In recent years, in order to achieve a higher degree of integration in LSIs, a pattern forming m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/004C09D5/00C09D7/12C09D133/02C09D139/06G03F7/09G03F7/11H01L21/027
CPCC09D5/00G03F7/091C09D7/65C09D7/63C09D5/006
Inventor 高野祐辅田中初幸高野圣史桥本丰
Owner MERCK PERFORMANCE MATERIALS GK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com