Laser frequency and strength modulator for semiconductor laser
A light intensity modulation, laser technology, applied in devices, instruments, optics, etc. to control the output parameters of lasers, can solve the problems of high frequency chirp and pulsation, limit the communication distance of the system, reduce the quality of signal transmission, etc., to reduce jitter, Mitigation of chirp and pulsation problems, and the effect of extending the range of use
Inactive Publication Date: 2004-11-17
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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However, under high-speed and ultra-high-speed modulation, this method will generate large frequency chirp and pulsation, which will reduce the transmission quality of the signal, limit the communication distance of the system, and even make the system unable to work
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[0022] in such as figure 1 In the shown device, the polarization beam splitter 5 uses a polarization beam splitter prism, the beam splitter 11 uses a beam splitter prism, and the ratio of the light intensity of the reflected beam of the beam splitter 11 to the light intensity of the transmitted beam is 20:80, and the photoelectric conversion device 12 using photodiodes.
[0023] The central wavelength of the three-electrode distributed Bragg reflective semiconductor laser 9 is 1.30 μm, and the modulated semiconductor laser 1 is a multi-quantum well semiconductor laser, and its central wavelength is around 1.30 μm.
[0024]As mentioned above, when the optical frequency is independently modulated, the magnitude and ratio of the output current of the driving power supply 10 are controlled so that the output optical frequency of the three-electrode distributed Bragg reflective semiconductor laser 9 is continuously modulated. According to the above description, the multi-quantum we...
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The laser frequency and strength modulator can modulate the laser frequency and the laser strength independently and the modulated light source is one three electrode-dispersing reflecting Bragg semiconductor laser. During laser frequency modulation, the current fed to the modulated semiconductor laser is controlled via the polarized beam splitter, beam splitter and photoelectronic converter to maintain the laser strength unchanged. During the laser strength modulation, the frequncy of the output laser beam is locked in some frequency by using the three electrode-dispersing reflecting Bragg semiconductor laser while turning off the photoelectronic converter connected to the drive current controller and controlling the output current strength of the drive current controller. The present invention expands the use range of modulator.
Description
Technical field: [0001] The present invention is an optical frequency and optical intensity modulator of a semiconductor laser (hereinafter referred to as LD), in particular relates to the optical frequency modulation of a light source used in a high-precision semiconductor laser heterodyne interferometer and used in a high-speed optical communication system Signal intensity modulation. Background technique: [0002] Semiconductor lasers (hereinafter referred to as LDs) are widely used due to their small size, low power consumption, low price, and easy wavelength modulation. In semiconductor laser heterodyne interferometry, direct injection current modulation is used (see prior art [1] Osami Sasaki, Kazuhide Takahashi, and TakamasaSuzuki, "Sinusoidal phase modulating laser diode interferometer with a feedback control system to eliminate extemal disturbance," Opt. Eng., 1990, 29(12), 1511-1515) or using light injection into LD (see prior art [2] X.F.Wang, X.Wang, F.Qian, G.C...
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IPC IPC(8): G02F1/01G02F1/35H01S5/06
Inventor 卢洪斌步扬王向朝
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI