Novel button anti-reflection film structure

Abstract

The invention belongs to the technical field of integrated circuit manufacturing technology. In order to improve the quality of photolithography, one of the methods is to use the bottom anti-reflection film (BARC) process. BARC is divided into two types: organic BARC and inorganic BARC. The invention proposes a composite anti-reflection film structure combining inorganic and organic BARC, wherein the inorganic BARC is on the bottom and the organic BARC is on the top. It not only takes advantage of the good flatness of organic BARC, but also reduces the line width loss problem of traditional etching organic BARC by using inorganic BARC. Moreover, the advantage of good selectivity of inorganic BARC is also used.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing technology, and in particular relates to a bottom anti-reflection film structure. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink. The current mainstream technology of 0.18 μm means that the length of the gate is 0.18 μm. The continuous reduction of line width firstly requires that the lines defined by the photolithography process become narrower and narrower, and of course the requirements for the etching process are also higher and higher. In order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, and the use of anti-reflection coating (ARC) is one of them. The role of ARC is to prevent light from being reflected at the substrate int...

AI Technical Summary

Problems solved by technology

Of course, due to the use of PECVD method, it is worse than organic BARC in terms of process development and process stability.

In addition, the use of inorganic BARC will cause changes in the thickness of the photoresist on the surface of the silicon wafer, which will also have a certain impact on the uniformity of the line width and the depth of field during photolithography.

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