Manufacturing methd of liquid crystal display device

Abstract

A technology for preparing LCD with wide visual angle includes such steps as generating the metal layer and insulating layer of grid and alpha-silicon layer, photoetching to form islands, generating interlayer insulating film and metal layer of drain, photoetching to form drain lines, generating organic insulating film, photoetching to form organic insulating contacts connected to source and drain, generating transparent conducting film, and photoetching to form pixel electrodes and common electrodes.

Description

technical field [0001] The present invention relates to methods of manufacturing liquid crystal displays (LCDs), and more particularly to methods for manufacturing LCDs that enable displays with wide viewing angles. Background technique [0002] Generally speaking, in an LCD capable of providing a wide viewing angle, display with a wide viewing angle is achieved by arranging a common electrode and a pixel electrode on a protective film of a TFT (Thin Film Transistor) and by forming an electrode on a surface parallel to the surface of the active matrix substrate. Rotating the direction of the molecular axes of the liquid crystal molecules in the liquid crystal layer in a sealed manner is achieved, a typical example of which is an IPS (In-Plane Switching) type LCD. [0003] Figure 20 A schematic configuration of a pixel portion constituting a conventional IPS type LCD capable of providing a wide viewing angle disclosed in Japanese Patent Application Laid-Open No. Hei 10-18640...

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Problems solved by technology

[0006] However, the conventional method for manufacturing the IPS type LCD disclosed in Japanese Patent Application Laid-Open No. Hei 10-186407 has a problem in that the manufacturing process of the TFT becomes relatively long due to the use of the first to sixth masks.

[0007] In addition, when the known shortened TFT manufacturing process is used in the case of manufacturing IPS type LCDs, since the patterning process is done on the semiconductor layer and electrodes with a photolithography process, the shapes of the semiconductor layers and electrodes are the same, so the TFT The steps become relatively large, which makes it difficult to exert control over the liquid crystal orientation, thus causing an increase in black brightness and causing the so-called "floating black"

[0008] Furthermore, when a shortened TFT manufacturing process is employed, the coverage of the passivation film becomes weak, which causes the electrode material (for source and drain) to penetrate into the liquid crystal from the defective coverage portion and thus causes a gradual Display failure (dot-shaped defect or black defect) occurs

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