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Holotype photoresist composite

A technology of photoresist and composition, which is applied in the field of positive photoresist composition, can solve problems such as difficulty in application and increased coating amount of resist, and achieve the purpose of suppressing the generation of blurred spots and suppressing The generation of streak marks and the effect of suppressing drip marks

Active Publication Date: 2006-12-20
TOKYO OHKA KOGYO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has also been found that the generation of the stripe marks can be suppressed by forming the coating film before rotation thicker, but the amount of resist coating will increase in this way, especially when strict control of resist consumption is required ( Resist-saving) in the field of liquid crystal display element manufacturing in recent years, it is difficult to apply

Method used

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  • Holotype photoresist composite
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Examples

Experimental program
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Effect test

Embodiment 1～2、 comparative example 1～2

[0134] In the examples and comparative examples, the photoresist compositions were prepared according to the ratio shown in Table 1, and the evaluations of blur spots, drop marks and streak marks were performed respectively. The evaluation results are shown in Table 2.

[0135] In addition, in the evaluation of photoresist pattern forming ability, on the substrate of each example, the resist pattern of 3.0 μm line & space was reproduced with a predetermined size, while in the comparative example, due to the influence of stripe marks As a result of the change in film thickness, it can be seen that a part of the resist pattern has a dimensional change.

[0136] The following (a1)-(a3) were used as (A) component. (A) The compounding quantity of a component was set to 100 mass parts. In Table 1, ( / / ) represents a mixture mixed at the described mass ratio.

[0137] (a1): For the mixed phenols of m-cresol / p-cresol=30 / 70, take formaldehyde as condensing agent, carry out condensati...

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Abstract

A positive photoresist composition comprises (A) an alkali-soluble novolac resin, (C) a naphthoquinonediazido-containing compound, (D) an organic solvent and (E) a polyester modified polydialkylsiloxane surfactant including a specified repeating unit that is represented by the formulas (1) and (2), wherein, R<1> represents the chain or branch chain alkyl having one to three carbon atoms, R<2> represents the chain or branch chain alkyl having one to fifteen carbon atoms, and R<3> represents polyester modified group. The invention can a positive photoresist composition capable of solving at least one of the following technical problems: prevention of the occurrence of haze and unevenness when the top of a highly reflective metal film is coated with a photoresist composition; improvement of uniformity of film thickness by preventing the occurrence of drop marks in a coating method by spinning after central dropping; and improvement of uniformity of film thickness by preventing the occurrence of streaks in a discharge nozzle system coating method.

Description

technical field [0001] The invention relates to a positive photoresist composition. Background technique [0002] Resist patterns are generally used in wiring pattern production in the field of LCD (liquid crystal element) production. A resist pattern is generally formed by applying a photoresist composition on a substrate to form a resist film, selectively exposing the resist film, and then forming a resist pattern by development. [0003] Therefore, in order to manufacture fine wiring patterns with high precision, one of the main technical problems is to ensure that the film thickness of the resist film is uniform. [0004] In the manufacture of a TFT liquid crystal panel, generally, a metal film is formed as a gate electrode on a transparent glass substrate, a resist pattern is formed on the metal film, and wiring patterning is performed on the gate electrode. The gate electrode can be made of alloys such as molybdenum-tantalum, molybdenum-tungsten, or metals such as ta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/022G03F7/004C08G77/445G03F7/023G03F7/075
CPCG03F7/0007G03F7/0045G03F7/022G03F7/0392G03F7/0757
Inventor 森尾公隆加藤哲也
Owner TOKYO OHKA KOGYO CO LTD
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