Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for reducing dimension differences between isolated contact aperture and dense contact aperture

A contact hole and isolation technology, applied in the field of semiconductor manufacturing technology, can solve the problems of high cost, long cycle, and inability to adapt to new technology

Inactive Publication Date: 2006-12-20
SHANGHAI HUA HONG GROUP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conventional method to solve this kind of problem is to add OPC (Optical Proximity Correction, optical proximity effect correction) on the plate, but the cost is very high, the cycle is very long, and when the process changes (such as photoresist replacement, lighting method changes during exposure, etc.) etc.) After the original OPC can not adapt to the new process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for reducing dimension differences between isolated contact aperture and dense contact aperture
  • A method for reducing dimension differences between isolated contact aperture and dense contact aperture

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] see figure 2 , after the hole lithography of the prior art process flow, UV curing is performed once, making full use of the UV-sensitive characteristics of DUV (deep ultraviolet) photoresist, by selecting the optimized post-baking temperature (including the initial temperature and the highest temperature) , UV power and process time to control the shrinkage of the photoresist, thereby adjusting the size of the isolated contact hole and the dense contact hole to make the two tend to be consistent. The specific post-baking temperature, UV power and process time depend on the type and thickness of photoresist, and the size difference between isolated contact holes and dense contact holes before curing. The typical value of the initial temperature is 80°C, the maximum temperature range is 100°C~180°C (140°C can be selected as the base temperature to start the experiment), and the high temperature time (both baking and ultraviolet irradiation time) is about 20 seconds to 8...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In the process of semiconductor, the size is decreased step-by-step; the control standard is more and more compact. The logic circuit exists the independent structure and the close-packed structure at the same time, how to decrease the difference between the two parts in order to control all the structures in the same standards is difficult. Especially in aspect of contacting hole photo etching, because of using the phase PSM (phase shift mask) RET technology, it solves the resolution problem, at the same time, it is easy to occur that the side of the independent contacting hole is far smaller than the side of the close-packed contacting hole. The invention reduces the difference between the sides of the two kinds of holes through ultraviolet solid glue. Because that large area around the ultraviolet solid glue is the photo etching glue, the side change caused by the photo etching glue shrinkage, thus the difference between them can be reduced prominently, even they are can adjusted to be accordant.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and in particular relates to a method for reducing the size difference between isolated contact holes and dense contact holes in integrated circuit technology. technical background [0002] In advanced semiconductor manufacturing processes, as the feature size shrinks gradually, its control specifications become tighter and tighter. Due to the simultaneous existence of isolated structures and dense structures of contact holes in integrated circuit manufacturing, how to reduce the difference between the two so as to control all structures within the same specification is becoming more and more difficult. Especially in contact hole lithography, due to the application of RET (Resolution Enhancement Technology, resolution enhancement technology) such as PSM (phase shift mask), it is easy to have isolated contact hole size while solving the resolution problem. Much smal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L21/30H01L21/027G03F7/00
Inventor 肖慧敏
Owner SHANGHAI HUA HONG GROUP