Auxiliary grid hot wire chemical vapor deposition process for preparing nano-diamond thin film

Abstract

One kind plates covers the area of technology the preparation nanometer diamond thin film auxiliary electronics grid hot filament chemistry gas phase sedimentation, in in the hot filament CVD deposition diamond thin film foundation, increases a kind of auxiliary electronics grid, the auxiliary electronics grid in the hot filament deposition initial period, deposits in advance a diamond thin film, then adds on the direct current bias between the electronics grid and the hot filament, the electronics grid for negative, the electronics grid surface diamond thin film is the launch electron forms the direct current electric discharge, cation will shell the electronics grid, the diamond atom and the atomic group which will shell down splashes down to the substrate on, will become the diamond shape nucleus and the growth driving point, The sputtering the diamond high density shape nucleus and quadratic form the nucleus played the key role to the substrate on, the substrate surface deposition obtained the nanometer diamond thin film. The invention can reach to the limit the high shape nuclear density, simultaneously has the very high two speeds in the growth process, can grow obtains a nanometer level the diamond thin film, after the deposition the thin film does not need to grind polishes can achieve a higher smooth finish, satisfies the operation requirements.

Description

technical field [0001] The invention relates to a method for preparing a nano-diamond film, in particular to an auxiliary grid hot-wire chemical vapor deposition method for preparing a nano-diamond film, which is used in the technical field of plating. Background technique [0002] With the development and maturity of CVD diamond film deposition technology, nano-diamond film coating technology has rapidly become a new hotspot in the field of CVD diamond film research. Nano-diamond film grains are very small, ranging from several to tens of nanometers, two orders of magnitude smaller than conventional diamond films, the surface is extremely smooth, the surface roughness can be below Ra100nm, and the friction coefficient of the film is very small, only 0.03 ~0.06, much lower than 0.2~1.1 of conventional diamond film. The emergence of nano-diamond films makes it possible to directly obtain diamond films with smooth surfaces on substrate materials. More importantly, the deposit...

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Problems solved by technology

Using the above method, the substrate must be roughened with 0.5 μm diamond micropowder grinding before deposition to enhance the nucleation density of the diamond film, which will affect the flatness and smoothness of the film. In this case, it is very difficult It is difficult to deposit a very smooth nano-diamond film on the surface of the substrate, and the above-mentioned method is based on the silicon substrate material, which is extremely widely used in the field of tools, molds and wear-resistant devices. WC-Co cemented carbide substrate material, due to Using the grinding and roughening pretreatment method that destroys the smooth surface of the substrate and produces a large number of defects, there is no suitable method to directly deposit a very smooth high-performance nano-diamond film on its surface.

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