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Digital alloy composite substrate for mercury-cadmium tellurium epitaxial growth and preparing method

A technology of epitaxial growth and composite substrate, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as equipment complexity

Active Publication Date: 2007-01-31
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since this method needs to introduce a Se source, it brings complexity to the device

Method used

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  • Digital alloy composite substrate for mercury-cadmium tellurium epitaxial growth and preparing method

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Embodiment Construction

[0024] The specific embodiment of the present invention is introduced below in conjunction with accompanying drawing:

[0025] See figure 1 , the digital alloy composite substrate of the present invention includes: a substrate 1, on which a buffer layer 2, a digital alloy layer 3, and a transition layer 4 are placed in sequence by molecular beam epitaxy.

[0026] First, a CdTe buffer layer 2 is grown on a Si substrate 1 by conventional molecular beam epitaxy or atomic layer epitaxy at a growth temperature of 200-250° C. and a thickness of 2-50 nm; then the temperature is increased to 350-400° C. In the epitaxial growth chamber, annealing is performed under the protection of a Te molecular beam, and the annealing time is 10-15 minutes.

[0027] Then lower the temperature to 160-220°C to grow the digital alloy layer [Hg 1-x Cd x Te / Hg 1-y Cd y Te] N , in order to ensure the dislocation thermal motion effect, the value of x should be between 0-0.22. The y component is rela...

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Abstract

The substrate includes a base sheet, a buffer layer, a digital alloy layer and transition layer. In the invention, normal molecular beam epitaxial method or atom epitaxial method and reprocessing technology is used, problem that epitaxial HgCdTe material on lattice mismatched substrate has high dislocation density is resolved by different growth technology condition and specific structure. The alloy layer is made being infrared transparent corresponding to HgCeTe succeed epitaxial layer by adjusting Y component of digital alloy layer. It can be used as flushbonading front cut-off band-pass optical filter of various infrared focal plane detector with back illumination structure. The method is suitable for epitaxial high quality HgCdTe material on substrate of Si, Ge, GaAs and gem.

Description

technical field [0001] The invention relates to a substrate and a preparation method for growing mercury cadmium telluride (HgCdTe) epitaxy materials used in infrared imaging detectors or infrared focal plane detectors. Background technique [0002] The development trend of infrared imaging detector or infrared focal plane detector technology is to increase the scale and resolution of focal plane devices to improve target recognition ability. Increasing the scale of the focal plane device means further expansion of the detector chip scale, which in turn puts forward higher requirements for the chip substrate. CdZnTe substrates lattice-matched with HgCdTe are not favored by people because of their difficult growth, high price, poor mechanical strength and crystal uniformity. In addition to the advantages of thermal matching with the readout circuit, the substrate using silicon as the HgCdTe epitaxial material also has the advantages of extremely cheap, large area (12 inches)...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/36
Inventor 何力陈路巫艳于梅芳王元樟吴俊乔怡敏
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI