Ordinary-type infrared GaAs sensor
An infrared detector, room temperature technology, used in instruments, thermometers, capacitors, etc., can solve the problems of complex and difficult manufacturing processes, and achieve the effects of avoiding unevenness, improving sensitivity, and good linearity.
Inactive Publication Date: 2002-04-03
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology
Resistive type, such as silicon Bolometer type devices; capacitive type, there are two types, one is a varactor detector that uses the dielectric constant to change with temperature, such as a detector made of ferroelectric material and pyroelectric material, and the other is One is a varactor detector that uses the distance between capacitive plates to change with temperature, such as a silicon plate capacitive detector, but its manufacturing process is quite complicated and difficult. For details, see SPIEVol.3061 p210 "An Uncooled IR Imager with 5 mK NEDT", SPIE Vol.3436 (part two) p647 "Progress towards an uncooled IR imager with 5mKNEDT"
In addition, the micro-mechanical technology based on the current silicon material can only form a flat electrode distance of 200 nanometers, and the capacitance C∝1 / d, where d is the distance between the flat electrodes, so the relative change in capacitance ΔC / C∝Δd / d 2
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[0017] The fabrication process of the device is as image 3 shown.
[0018] The first step is to sequentially grow a highly doped Si GaAs lower electrode layer 2 on the GaAs substrate 1 by molecular beam epitaxy method or metal organic chemical vapor deposition method and other single crystal thin film growth techniques, with a thickness of 1 micron and a doping concentration of 1× 10 18 cm -3 ; The non-doped AlAs spacer support layer 3 has a thickness of 30-60 nanometers; the highly doped Si GaAs upper electrode layer 4 has a thickness of 300-1000 nanometers and a doping concentration of 1×10 18 cm -3 ,See image 3 (a).
[0019] Step 2 is through photolithography in the image 3 (a) Evaporable Si is formed on the material shown 3 N 4 The graphics of the heat-absorbing layer, and then use chemical deposition or thermal evaporation and other coating techniques to coat the Si 3 N 4 The heat absorbing layer 5 is formed on the upper electrode layer 4, the shape of the he...
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Abstract
An room temperature infrared GaAs detector designed on the basis that flat capactance varies with temp is featured structurally by that on GaAs substrate, there is a high si doped GaAs layer as lowerelectrode of flat capacitor. Between the end parts of upper and lower electrodes of flat capacitor, there is a AlAs layer to support the upper electrode in suspended state, and a heat-absoptive Si3N4layer is on the upper electrode layer which is a high Si doped GaAs layer. When said heat absorptive layer is radiated, the distance between upper and lower electrodes changes, resulting variation ofits capacitance. Its advantages are higher sensitivity and langer relative variance for quantity of capacitance.
Description
technical field [0001] The invention belongs to thermal-sensitive infrared detectors, in particular to a room-temperature GaAs infrared detector designed based on the principle that plate capacitance varies with temperature. Background technique [0002] At present, the typical room temperature infrared detectors are resistive or capacitive. Resistive type, such as silicon Bolometer type devices; capacitive type has two types, one is a varactor detector that uses the dielectric constant to change with temperature, such as a detector made of ferroelectric material and pyroelectric material, and the other is One is a varactor detector that uses the distance between capacitive plates to change with temperature, such as a silicon plate capacitive detector, but its manufacturing process is quite complicated and difficult. For details, see SPIEVol.3061 p210 "An Uncooled IR Imager with 5 mK NEDT", SPIE Vol. 3436 (part two) p647 "Progress towards an uncooled...
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IPC IPC(8): G01K7/34H01G9/04H01L27/14
Inventor 陆卫李宁李志锋陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI